Physics for Scientists and Engineers With Modern Physics
9th Edition
ISBN: 9781133953982
Author: SERWAY, Raymond A./
Publisher: Cengage Learning
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Chapter 43, Problem 6OQ
(i)
To determine
The correct option about the conductivity of an
(ii)
To determine
The correct option about the conductivity of an
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The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid.
(a) At what temperature must the boron-doping process be operated? It is known
that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by
Where Do=0.019 cm2/s and Qo=2.74 x 105…
Pure silicon at room temperature has an electron number density in the conduction band of about 5 * 105 m-3 and an equal density of holes in the valence band. Suppose that one of every 107 silicon atoms is replaced by a phosphorus atom. (a) Which type will the doped semiconductor be, n or p? (b) What charge carrier number density will the phosphorus add? (c) What is the ratio of the charge carrier number density (electrons in the conduction band and holes in the valence band) in the doped silicon to that in pure silicon?
Chapter 43 Solutions
Physics for Scientists and Engineers With Modern Physics
Ch. 43.1 - For each of the following atoms or molecules,...Ch. 43.2 - Prob. 43.2QQCh. 43.2 - Prob. 43.3QQCh. 43 - Prob. 1OQCh. 43 - Prob. 2OQCh. 43 - Prob. 3OQCh. 43 - Prob. 4OQCh. 43 - Prob. 5OQCh. 43 - Prob. 6OQCh. 43 - Prob. 7OQ
Ch. 43 - Prob. 1CQCh. 43 - Prob. 2CQCh. 43 - Prob. 3CQCh. 43 - Prob. 4CQCh. 43 - Prob. 5CQCh. 43 - Prob. 6CQCh. 43 - Prob. 7CQCh. 43 - Prob. 8CQCh. 43 - Discuss models for the different types of bonds...Ch. 43 - Prob. 10CQCh. 43 - Prob. 1PCh. 43 - Prob. 2PCh. 43 - Prob. 3PCh. 43 - Prob. 4PCh. 43 - Prob. 5PCh. 43 - Prob. 6PCh. 43 - Prob. 7PCh. 43 - Prob. 8PCh. 43 - Prob. 9PCh. 43 - Prob. 10PCh. 43 - Prob. 12PCh. 43 - Prob. 13PCh. 43 - Prob. 14PCh. 43 - Prob. 15PCh. 43 - Prob. 16PCh. 43 - The nuclei of the O2 molecule are separated by a...Ch. 43 - Prob. 18PCh. 43 - Prob. 19PCh. 43 - Prob. 20PCh. 43 - Prob. 21PCh. 43 - Prob. 22PCh. 43 - Prob. 23PCh. 43 - Prob. 24PCh. 43 - Prob. 25PCh. 43 - Prob. 27PCh. 43 - Prob. 28PCh. 43 - Prob. 29PCh. 43 - Prob. 30PCh. 43 - Prob. 31PCh. 43 - Prob. 32PCh. 43 - Prob. 33PCh. 43 - Prob. 34PCh. 43 - Prob. 35PCh. 43 - Prob. 36PCh. 43 - Prob. 37PCh. 43 - Prob. 38PCh. 43 - Prob. 39PCh. 43 - Prob. 40PCh. 43 - Prob. 41PCh. 43 - Prob. 42PCh. 43 - Prob. 43PCh. 43 - Prob. 44PCh. 43 - Prob. 45PCh. 43 - Prob. 46PCh. 43 - Prob. 47PCh. 43 - Prob. 49PCh. 43 - Prob. 50PCh. 43 - Prob. 51PCh. 43 - A direct and relatively simple demonstration of...Ch. 43 - Prob. 53PCh. 43 - Prob. 54APCh. 43 - Prob. 55APCh. 43 - Prob. 56APCh. 43 - Prob. 57APCh. 43 - Prob. 58APCh. 43 - Prob. 59APCh. 43 - Prob. 61APCh. 43 - Prob. 62APCh. 43 - Prob. 63CPCh. 43 - As an alternative to Equation 43.1, another useful...
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