Engineering Electromagnetics
Engineering Electromagnetics
9th Edition
ISBN: 9780078028151
Author: Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher: Mcgraw-hill Education,
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Chapter 5, Problem 5.25P

Electron and hole concentration increase with temperature. For pure silicon, suitable expression are ph=6200T1.5e-7000/TC/m3. The functional dependence of the motilities on temperature is given by μ h = 2.3 × 10 5 T 2.7 m 2 / V . s and μ e = 2.1 × 10 5 T 2.5 m 2 / V . s ,

where the temperature, T, is in degrees Kelvin. Find σ at: (a) 0°C; (b) 40°C; (c) 80°C.

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