Q: P. type semiconductor with length ( 5mm), the cross-section area of (A= 0.5 mm), and resistance (R=2502). Calculate the exact number of the majority (pp) and the minority (np) carriers. Also, calculate the number of acceptor atoms (NA) if the intrinsic carrier (n = 2x1020/m³). Given the mobility for the electrons (u-0.4m?/V.s) and for the holes (u-0.2m²/V.s)

Q: P. type semiconductor with length ( 5mm), the cross-section area of (A= 0.5 mm), and resistance (R=2502). Calculate the exact number of the majority (pp) and the minority (np) carriers. Also, calculate the number of acceptor atoms (NA) if the intrinsic carrier (n = 2x1020/m³). Given the mobility for the electrons (u-0.4m?/V.s) and for the holes (u-0.2m²/V.s)

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

A group IV semiconductor has an intrinsic carrier concentration of 2.4×10^13 ??−3 at 300 K.a. Given its electron and hole mobilities, calculate its intrinsic electrical conductivity which are 3900 ??^2/?? and 1900 ??^2/?? respectively.
A silicon sample is supporting an electric ﬁeld of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?
Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A = 2.5 × 10-3cm2, I = 2 mA and the magnetic field is 500 Gauss. If the Hall voltage of +150mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity and mobility of the semiconductor sample.
We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies linearly from 10E20 cm^-3 to 0 from left to right. If the mobility of the electrons is 500 cm^2/V.s, what is the current density if the electric fields are negligible?
A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?
2. For a semiconductor with a constant mobility ratio b=μn/μp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio.(HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρm /ρi. This ratio should be independent of the carrier concentrations.)
An n-type semiconductor sample has an electron density of 6.25 x 10 ^ 18 / cm ^ 3 at 300K. If the concentration of the carriers in this example is 2.5 x 10 ^ 13 / cm ^ 3, what is the hole density at this temperature?
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
What length of around copper wire of diameter 1mm will have a resistance 1K ohm if copper conductivity is 60 (ohm.m). A cylindrical piece of silicon having a diameter of 1mm doped with 10 ^ 20 / m ^ 3, atoms of phosphorous which are fully ionized. What length of this silicon would be required to give a resistance of 1K ohm if electronic mobility in silicon is 0.1m ^ 2? /V.Sec. ?
The ability to move holes in a semiconductor at T = 300 K is 500 cm? / V is the voltage given as 26mV. what is the diffusion constant of the holes accordingly
Consider the above semiconductor structure, where Al is alloyed into an n-type Si sample with Nd=1016 cm-3 that formed a circular cross-section junction of diameter 0.02 inch. If the acceptor ion concentration in the alloyed regrown region is Na=4x1018 cm-3 then for this junction at thermal equilibrium calculate- (a) V0, xn0, xp0, Q+ and ε0.(b) Draw the charge density and electric field distribution within the region, W.