Ql: A bar of intrinsic silicon having a cross section area of3×104 m² has an n=1.5×10!%m³. If µ,-0.14 m²/V.s and µp=0.05m?/V.s. Find the long of the bar if the current is 1.2mA and theapplied voltage is 9V.(Ans: 1.026mm)

Answered: Image /qna-images/answer/8ab8dcac-bdc3-4175-94f8-8a4a18cec816.jpg

QI: A bar of intrinsic silicon having a cross section area of 3×104 m² has an n=1.5×10!m³. If µ„-0.14 m²/V.s and µ,=0.05 m?/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm)

QI: A bar of intrinsic silicon having a cross section area of 3×104 m² has an n=1.5×10!m³. If µ„-0.14 m²/V.s and µ,=0.05 m?/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature. 1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
Assume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°C
A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
A semiconductor has a bandgap of 2 eV and effective densities of states of Nc = 1019/cm3 and Nv = 5x1018/cm3. If this semiconductor is doped with 1017donors/cm3 (fully ionized), calculate the hole, electron, and intrinsic carrier concentrations at 600C. Sketch the band diagram and indicate the position of EF.
Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
(A) compute the concentration of electrons and hole in an intrinsic sample of Si at room temperature you may take me = 0.7 mo and mh = mo (b) Determine the position of fermi level under these condition ?
An ideal photo-diode of unit quantum efficiency, at room temperature, is illuminated with 8 mW of radiation at 0.65 µm wavelength. Calculate the current and voltage output when the detector is used in the photo-conductive and photovoltaic modes respectively. The reverse saturation current (Is) is 9 nA
A GaAs semiconductor sample is doped with donors (ND = 1015 cm-3). Calculate the intrinsic temperature. Intrinsic temperature is the temperature at which a doped semiconductor becomes intrinsic. Assume room temperature values for Eg, NC, NV. Also assume that the three parameters (Eg, NC, NV) are independent of temperature. Hints: Calculate the temperature at which ni = ND. Eg = 1.42 eV (T = 300K) Get room T NC and NV values from the book or from lecture 3.
A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)
A crystalline silicon photovoltaic cell has an open circuit voltage of 0.5V and a short circuit current of 1.8 A at Standard Test Conditions. What is the maximum output power at Standard Test Conditions and at a cell temperature of 50oC? What is the percentage decrease in power per oC? Assume a Fill Factor of 0.70 at 25oC. (As a rule of thumb for crystalline silicon solar cells, the increase in short circuit current is about 0.058% per oC while the decrease on open circuit voltage is 0.30% per oC and decrease in the fill factor is by 0.15% per oC).
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.