Concept explainers
Calculate the intrinsic carrier concentration in gallium arsenide and germanium at
Intrinsic carrier concentration in GaAs (Gallium Arsenide) and Germanium (Ge).
Answer to Problem 1.1EP
Intrinsic carrier concentration in GaAs is
Explanation of Solution
Given:
Temperature,
For Gallium Arsenide,
Band gap energy is
Specific semiconductor coefficient is
Boltzmann’s constant is
For Germanium,
Band gap energy is
Specific semiconductor coefficient is
Boltzmann’s constant is
Concept Used:
The intrinsic carrier concentration formula is given as
Calculation:
For Gallium Arsenide, substitute the given values in equation (1).
For Germanium, substitute the given values in equation (1).
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