Microelectronics: Circuit Analysis and Design

4th Edition

ISBN: 9780073380643

Author: Donald A. Neamen

Publisher: McGraw-Hill Companies, The

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Textbook Question

Chapter 1, Problem 1.17TYU

The resistor in the circuit shown in Figure 1.45 has a value of R = 4 k Ω , the Zener diode breakdown voltage is V Z = 3.6 V , and the power rating of the Zener diode is P = 6 . 5 mW . Determine the maximum diode current and the maximum power supply voltage that can be applied without damaging the diode. (Ans. 1.81 mA, 10.8 V).

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Chapter 1, Problem 1.16TYU

Chapter 1, Problem 1RQ

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Chapter 1 Solutions

Microelectronics: Circuit Analysis and Design

Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...

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Solution Summary: The author calculates the maximum diode current and maximum power supply voltage using Kirchhoff's Voltage law.

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Chapter 1 Solutions