The zero−bias capacitance of a silicon pn junction diode is C j o = 0.02 pF and the built−in potential is V b i = 0.80 V . The diode is reverse biased through a 47 − k Ω resistor and a voltage source. (a) For t < 0 , the applied voltage is 5 V and, at t = 0 , the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
The zero−bias capacitance of a silicon pn junction diode is C j o = 0.02 pF and the built−in potential is V b i = 0.80 V . The diode is reverse biased through a 47 − k Ω resistor and a voltage source. (a) For t < 0 , the applied voltage is 5 V and, at t = 0 , the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
Solution Summary: The author explains the value of the zero capacitance and the built-in potential of a pn junction diode.
The zero−bias capacitance of a silicon pn junction diode is
C
j
o
=
0.02
pF
and the built−in potential is
V
b
i
=
0.80
V
. The diode is reverse biased through a
47
−
k
Ω
resistor and a voltage source. (a) For
t
<
0
, the applied voltage is 5 V and, at
t
=
0
, the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
Calculate the capacitance for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA=1×1020/m³, Np= 1×1018, n¡ = 1×1015/m³, ɛ= 11.7, and the cross section area is 1µm.
The following parameters are used in an EDM process, the supply voltage is 150V. The resistance and capacitance in the circuit are 50 Ohms and 15 microfarads respectively. The tool is made of brass and kerosene is used as the dielectric. A hole diameter of 20 mm is to be cut into a plate of thickness of 3mm. If the discharge takes place at maximum power conditions. The value of constant K4=0.18, calculate the MRR, and machining time.
a.)If the current through a 1-mH inductor is i(t) = 20 cos 100t mA, find the terminal voltage and the energy stored.
b.)The terminal voltage of a 2-H inductor is v = 10(1 – t ) V. Find the current flowing through it at t = 4 s and the energy stored in it at t = 4 s. Assume i(0)=2A.
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