Microelectronics Circuit Analysis and Design
Microelectronics Circuit Analysis and Design
4th Edition
ISBN: 9780077387815
Author: NEAMEN
Publisher: DGTL BNCOM
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Textbook Question
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Chapter 16, Problem 16.1EP

Consider the NMOS inverter with resistor load in Figure 16.3(a) biased at V D D = 3 V . Assume transistor parameters of k n = 100 μ A/V 2 , W / L = 4 , and V T N = 0.5 V . (a) Find the value of R D such that υ O = 0.1 V when υ I = 3 V . (b) Using the results of part (a), determine the maximum current and maximum power dissipation in the inverter. (c) Using the results of part (a), determine the transition point for the driver transistor. (Ans. (a) R D = 29.6 k Ω ; (b) i D , max = 0.098 mA/V , P D , max = 0.294 mW ;(c) V I t = 1.132 V , V O t = 0.632 V )

(a)

Expert Solution
Check Mark
To determine

The value of RD

Answer to Problem 16.1EP

The value of RD is 29.6kΩ .

Explanation of Solution

Given:

  VDD=3V .

  kn'=100μA/V2 , W/L=4 , and VTN=0.5V

  vo=0.1V when v1=3V .

Calculation:

Consider the NMOS inverter with resister load biased at VDD=3V is shown in Figure 1 .

  Microelectronics Circuit Analysis and Design, Chapter 16, Problem 16.1EP

Figure 1

From the circuit,

  vDS=vo=0.1VvGS=v1=3V

Calculate the value of VGSVTN

  VGSVTN=30.5=2.5V

Since, VDS<VGSVTN , the transistor is operating in non-saturation region.

The current drain equation is,

  iD=Kn[2(vGSVTN)vDSv2DS]=(kn'2)(WL)[2(vGSVTN)vDSv2DS](SinceKn=(kn'2)(WL))=(100×1062)(4)[2(2.5)(0.1)0.12]=98μA

Apply Kirchhoff’s voltage law to the circuit.

  vO=VDDRDIDRD=VDDvOIDRD=30.198×106RD=29.6kΩ

Conclusion:

Therefore, the value of RD is 29.6kΩ .

(b)

Expert Solution
Check Mark
To determine

The maximum current and maximum power dissipation in the inverter.

Answer to Problem 16.1EP

The maximum power transfer is, PD,max=0.294mW

The maximum drain current is, iD,max=0.098mA

Explanation of Solution

Given:

  VDD=3V .

  kn'=100μA/V2 , W/L=4 , and VTN=0.5V

Calculation:

Consider Figure 1.

The maximum current is,

  iD,max=VDDvORD=30.129.6×103=0.098mA

The maximum power transfer is,

  PD,max=iD,max×VDD=0.98mA×3V=0.294mW

Conclusion:

Therefore, the maximum power transfer is, PD,max=0.294mW and the maximum drain current is, iD,max=0.098mA

(c)

Expert Solution
Check Mark
To determine

The transition point for the driver transistor.

Answer to Problem 16.1EP

The transition point for the driver transistor is

  V1t=1.132V

  VOt=0.632V

Explanation of Solution

Given:

  VDD=3V .

  kn'=100μA/V2 , W/L=4 , and VTN=0.5V

Calculation:

Transitionpoints for the driver resistor is

  KnRD(V1tVTN)2+(V1tVTN)VDD=0(2×104)(29.6×103)(V1t0.5)2+(V1t0.5)3=05.92(V1t0.5)2+(V1t0.5)2=35.92((V1t)21V1t+0.25)+V1t3.5=05.92(V1t)24.92V1t+2.02=0V1t=1.132,0.3013

As the transition voltage is positive and greater than zero for NMOS, the input transition voltage is V1t=1.132V

The output transition voltage is,

  VOt=V1tVTN=1.1320.5=0.632V

Conclusion:

Therefore, the transition point are

  V1t=1.132V

  VOt=0.632V

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Chapter 16 Solutions

Microelectronics Circuit Analysis and Design

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