EP PHYSICS F/SCI.+ENGR.W/MOD..-MOD MAST
4th Edition
ISBN: 9780133899634
Author: GIANCOLI
Publisher: PEARSON CO
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Chapter 40, Problem 14Q
To determine
What is peculiar aspect of copper when compared to the other metals?
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Check out a sample textbook solutionStudents have asked these similar questions
(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of
a given copper sample are 1.28 x 1010 m and 8.98 x 10' kg/m' respectively, carry out the following:
Calculate the mass of the copper sample. T'ake Avogadro's number, NA = 6.023 x 1023
atoms/mole.
(i)
(ii) If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle
at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength
1.52 x 10-10 m is used for the analysis.
(c) Give two uses of pure copper and two commercial applications of copper alloys.
(e) Explain what you understand by the statement: “the bonding in a solid is 30 % ionic and
70 % covalent". Why such types of bondings are occurred in a materials. Give proper
reasoning with examples.
Silicon atoms with a concentration of 7x 1010 cm are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T = 300 K:
N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The intrinsic concentration?
Chapter 40 Solutions
EP PHYSICS F/SCI.+ENGR.W/MOD..-MOD MAST
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
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- Calculate the linear density (in units of atoms/nm) along the [101][101] direction in copper.arrow_forward(b) Copper crystallises as FCC (face centred cubic). Given that the atomic radius and density of a given copper sample are 1.28 x 10-10 m and 8.98 x 10' kg/m' respectively, carry out the following: (i) Calculate the mass of the copper sample. Take Avogadro's number, NA = 6.023 x 1023 atoms/mole. If the interatomic planar spacing, d, in the sample above is 2.96 x 1010 m, determine the angle at which the first Bragg reflection will occur from the (111) plane if x-radiation of wavelength 1.52 x 10-10 m is used for the analysis. (ii)arrow_forwardThe measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?arrow_forward
- Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardSilicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?arrow_forward
- Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?arrow_forwardQuestion 3) Electrical resistivity vs composition behavior at room temperature of Cu-Au alloys having two different thermal history are given below. Briefly explain this behavior. 160 140 Quenched MA 自120 100 80 Annealed 60 40 20 Cu,Au 0- O 10 20 30 40 50 60 70 80 90 100 Composition (at.% Au) Resistivity (n2 m)arrow_forwardIf a pentavalent element like antimony is doped to an extent of 1 atom in 10^8 germanium atoms what will be the conductivity after doping? (Concentration of germanium atoms in given sample is calculated as 4.41*10^28/m^3; consider the mobility of electron and hole as 0.38 and 0.18m^2/V.s, respectively)arrow_forward
- Doping is necessary in order to enhance the conduction ability of a semiconductor. Support this statement by giving suitable arguments?arrow_forwardAssume a temperature of 300 K and fi nd the wavelength of the photon necessary to cause an electron to jump from the valence to the conduction band in (a) germanium, (b) silicon, (c) InAs, and (d) ZnS.arrow_forwardWhat mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.arrow_forward
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