EP PHYSICS F/SCI.+ENGR.W/MOD..-MOD MAST
4th Edition
ISBN: 9780133899634
Author: GIANCOLI
Publisher: PEARSON CO
expand_more
expand_more
format_list_bulleted
Question
Chapter 40, Problem 89GP
To determine
Find the current produced in a flat silicon semiconductor.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
1) A Si p-n-p transistor has the following properties at room temperature:
Tn = Tp
0.1 us
NE
1019 сті
Emitter concentration
— 10 ст2/s
-3
Dn = Dp
NB 3D 1016 ст
Base concentration
Nc
1019 ст
-3
= Collector concentration
WE
3 µm
Emitter width
W
1.5 um
Metallurgical base width, i.e. the distance between base-emitter junction and
base-collector junction
A = 10-5 cm² = Cross-sectional area
If VCB = 0 V and VEB = 0.6 V, calculate the following:
ЕВ
a) Neutral base width (WB)
b) Base transport factor
c) Emitter injection efficiency
d)
a, ß and y.
e) Ic, Ig and Ig.
For silicon the conduction band minimum is located at 0.49 Å-1 in the [100] direction (X is the Brillouin zone at H00), while the valence band maximum is located at the Γ point (k = 0).a) What is the wavelength and energy of photons needed to supply the required momentum to excite an electron from the Γ point to the conduction band minimum?
b) What is the wavelength of photons needed to supply the required energy to excite an electron from the Γ point to the conduction band minimum?c) What limits optical absorption in silicon at photon energies near the band gap?
In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate.
Pd max = 07/100 W
Vce max = 20V
Ic max = 100mA
Bdc = 150
Chapter 40 Solutions
EP PHYSICS F/SCI.+ENGR.W/MOD..-MOD MAST
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
Knowledge Booster
Similar questions
- In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmarrow_forwarda) If the electron concentration increase along the x-axis of a conductor as shown in equation below: n=3-1030x2+2- 102x+1026 And D=1.2 x 10-4 m/s. Find the diffusion current at x =Smm? b) Find the minimum electron concentration nmin in semiconductor?arrow_forwardThe electron number density in a semiconductor varies from 1020 m³ to 10¹2 m³ linearly over a distance of 4 µm. Determine the electron diffusion current and electric field at the midpoint if no current flows, He = 0.135 m²V-¹s¹ and T = 300 K.arrow_forward
- The figure shows the pn junction 250 micrometers long and made of silicon with a surface area of 100 micrometers square. In this pn junction, the I region is doped with 10 ^ 19 cm ^ -3 and in the II: region with 10 ^ 17 cm ^ -3 atoms. Only when the S1 switch is closed, the maximum is drawn from the "a-b" ends and 250 mA flows from the circuit. The ability of electrons to move in the pn junction is 1200 cm ^ 2 / V.s, and the ability of the holes to move is 400 cm ^ 2 / V.s. What is the channel width accordingly? (W =?)arrow_forward(c) A common emitter BJT circuit and its voltage transfer curve is shown in Fig. 1(c) respectively. Assume the transistor common-emitter current gain, ß = 50, VBE (on) = 0.7 V, Rg = 100 kn and Rc = 1 k2. (i) Determine the input voltage at the point x. (ii) Calculate the base current, Ig and collector current, Ic at the point x. +Vcc Vo(V) Rc 5- Vo RB V, oww -RAR- IB VBE 0.5 V,(V) 15 Fig. 1(c) -END OF QUESTION-arrow_forward(c) Calculate the Fermi energy of silver from the data given below: atom. Density of Silver = 10.5 gm/cm³ atomic weight = 108 h = 6.62×10-34 Joule - sec m = 9.1×10-³1 Kg. Avogadro's number =6.02×10-21 atoms/gm-arrow_forward
- An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87arrow_forwardPhysics . Determine the number of conduction electrons/m3 in pure silicon AND silicon’s conductivity σfora) T = 10 Kb) T = 100 Kc) T = 1000 Kd) Conceptually, why does Si’s conductivity get better with increasing temperature?(For intrinsic Si, me* = 1.08me, μe = 1400cm2/V∙s, mh* = 0.60me, μh = 450cm2/V∙s, at. wt. = 28.085g/mol, density = 2.329 g/cm3).arrow_forward= Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10arrow_forward
- In Fig. 14, the transistor Q₁ has ß = 50, and VBE,on = 0.7 V. 5V 5V 1200 ic 2.2ΚΩ www iB in Fig. 14. NPN transistor circuit no. 2. NPN State Conditions Cutoff VBE 0, BiB > ic>0 Forward Active iB > 0, VCE > 0.2 V PNP State Conditions Cutoff VBE> -0.5 V, VBC > -0.5 V Saturation İB > 0, BiB > ic>0 Forward Active iB > 0, VCE < -0.2 V 37. Using simple model transistor analysis, determine the value of ic in mA, to 1 decimal place. (Hint: guess the state of the transistor, calculate the relevant parameters, check calculated parameters against the conditions for the guessed state to be valid.) ic = mAarrow_forwardIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forward48 Show that P(E), the occupancy probability in Eq. 41-6, is sym- metrical about the value of the Fermi energy; that is, show that P(EF + AE) + P(EF - AE) = 1.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax