Physics for Science and Engineering With Modern Physics, VI - Student Study Guide
4th Edition
ISBN: 9780132273244
Author: Doug Giancoli
Publisher: PEARSON
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Chapter 40.8, Problem 1DE
To determine
Find the impurity atom which produce p-type semiconductor.
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(I) Briefly define semiconductors. (II) Briefly explain the mechanism that semiconductor detectors use for radiation detection.
Pls help ASAP
At T=300K, the electron concentration of a semiconductor material
is n, = 10" cm*. The bandgap energy E=1.leV, Nc =2.8×10" cm, and
N, =1.0x10" cm³.
(1) Determine the hole concentration P. . Is this n-type or p-type
semiconductor?
(2) Determine E F – EF ;
(3) What is the dopant concentration, N, or .? (Please evaluate N, or N.)
Chapter 40 Solutions
Physics for Science and Engineering With Modern Physics, VI - Student Study Guide
Ch. 40.4 - Determine the three lowest rotational energy...Ch. 40.6 - Prob. 1BECh. 40.6 - Prob. 1CECh. 40.8 - Prob. 1DECh. 40 - What type of bond would you expect for (a) the N2...Ch. 40 - Describe how the molecule CaCl2 could be formed.Ch. 40 - Does the H2 molecule have a permanent dipole...Ch. 40 - Although the molecule H3 is not stable, the ion...Ch. 40 - The energy of a molecule can be divided into four...Ch. 40 - Would you expect the molecule H2+ to be stable? If...
Ch. 40 - Explain why the carbon atom (Z = 6) usually forms...Ch. 40 - Prob. 8QCh. 40 - Prob. 9QCh. 40 - Prob. 10QCh. 40 - Prob. 11QCh. 40 - Prob. 12QCh. 40 - Prob. 13QCh. 40 - Prob. 14QCh. 40 - Prob. 15QCh. 40 - Prob. 16QCh. 40 - Prob. 17QCh. 40 - Prob. 18QCh. 40 - Prob. 19QCh. 40 - Prob. 20QCh. 40 - Prob. 21QCh. 40 - Prob. 22QCh. 40 - Prob. 23QCh. 40 - Prob. 1PCh. 40 - (II) The measured binding energy of KCl is 4.43eV....Ch. 40 - (II) Estimate the binding energy of the H2...Ch. 40 - (II) The equilibrium distance r0 between two atoms...Ch. 40 - Prob. 5PCh. 40 - Prob. 6PCh. 40 - (III) (a) Apply reasoning similar to that in the...Ch. 40 - (I) Show that the quantity 2/I has units of...Ch. 40 - Prob. 9PCh. 40 - Prob. 10PCh. 40 - Prob. 11PCh. 40 - Prob. 12PCh. 40 - Prob. 13PCh. 40 - Prob. 14PCh. 40 - Prob. 15PCh. 40 - Prob. 16PCh. 40 - (II) Calculate the bond length for the NaCl...Ch. 40 - Prob. 18PCh. 40 - Prob. 19PCh. 40 - Prob. 20PCh. 40 - Prob. 21PCh. 40 - Prob. 22PCh. 40 - Prob. 23PCh. 40 - Prob. 24PCh. 40 - Prob. 25PCh. 40 - Prob. 26PCh. 40 - Prob. 27PCh. 40 - Prob. 28PCh. 40 - Prob. 29PCh. 40 - Prob. 30PCh. 40 - Prob. 31PCh. 40 - Prob. 32PCh. 40 - Prob. 33PCh. 40 - Prob. 34PCh. 40 - Prob. 35PCh. 40 - Prob. 36PCh. 40 - Prob. 37PCh. 40 - Prob. 38PCh. 40 - Prob. 39PCh. 40 - Prob. 40PCh. 40 - Prob. 41PCh. 40 - Prob. 42PCh. 40 - Prob. 43PCh. 40 - Prob. 44PCh. 40 - Prob. 45PCh. 40 - Prob. 46PCh. 40 - Prob. 47PCh. 40 - Prob. 48PCh. 40 - Prob. 49PCh. 40 - Prob. 50PCh. 40 - Prob. 51PCh. 40 - Prob. 52PCh. 40 - Prob. 53PCh. 40 - Prob. 54PCh. 40 - Prob. 55PCh. 40 - Prob. 56PCh. 40 - Prob. 57PCh. 40 - Prob. 58PCh. 40 - Prob. 59PCh. 40 - Prob. 60PCh. 40 - Prob. 61PCh. 40 - Prob. 62GPCh. 40 - Prob. 63GPCh. 40 - Prob. 64GPCh. 40 - Prob. 65GPCh. 40 - Prob. 66GPCh. 40 - Prob. 67GPCh. 40 - Prob. 68GPCh. 40 - Prob. 69GPCh. 40 - Prob. 70GPCh. 40 - Prob. 71GPCh. 40 - Prob. 72GPCh. 40 - Prob. 73GPCh. 40 - Prob. 74GPCh. 40 - Prob. 75GPCh. 40 - Prob. 76GPCh. 40 - Prob. 77GPCh. 40 - Prob. 78GPCh. 40 - Prob. 79GPCh. 40 - Prob. 80GPCh. 40 - Prob. 81GPCh. 40 - Prob. 82GPCh. 40 - Prob. 83GPCh. 40 - Prob. 84GPCh. 40 - Prob. 85GPCh. 40 - Prob. 86GPCh. 40 - Prob. 87GPCh. 40 - Prob. 88GPCh. 40 - Prob. 89GP
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- What kind (p-type or n-type) of semiconductor is made if pure silicon is doped with a small amount of (a) gallium; (b) antimony?arrow_forward(i) The total electrical resistivity of metals is the sum of the contributions from thermal vibrations, impurities and plastic deformation; (ii) the resistivity rises linearly with temperature above -200 degree Celsius; (iii) increasing the concentration of impurity results in an enhancement of impurity; (iv) plastic deformation also raises the electrical resistivity due to the increased numbers of electron-scattering dislocations. Which of the above statements is false? D. (iv) A. (i) C. (iii) E. All of the above B. (ii) Other:arrow_forward7. Consider a silicon pn-junction at T= 300 K. The reverse-saturation current Is is 1014 A. Determine the ratio of the current amplitudes, Ip(0.6 Vy Ip(0.4 V), when the forward bias increases from 0.4 V and 0.6 V. (a) 3 (b) 30 (c) 47 (d) 228 (e) 500arrow_forward
- silicon has electron concentration, no = 3x1016 cm3 and n; =1.5 x 1010 cm-3; at T=350 K. (a) Determine Po. (b) Is this material n or p type? (c) Determine E-EF.arrow_forwardUSE KVL AND KCL.....arrow_forward(3) In an n-tpye semiconductor for the given linear variation doping concentration of Na (x) = 1016 – 1019 x (cm3) (a) Derive the induced field E(x) and calculate E max at T = 37 °C. (b) Calculate the potential difference between x = 0 and x =2 um at T = 37 °C. Note: E(x) = - [dT/Na(x)][dNa(x)/dx], T= kT/earrow_forward
- A sample of silicon is uniformly 8 points doped with (10^16) arsenic atoms per cm-3 and 5x(10^15) boron atoms per cm-3. Using this information and assuming ni is (10^10) cm-3. at 300K determine the following items for this sample: a- The type (n or p).b- The majority carriers concentration.c- The minority carriers concentration. O n-type ; 5*(10^15) cm-3; 10000 cm-3 p-type ; 5*(10^15) cm-3; 10000 cm-3 n-type ; 10000 cm-3; 5*(10^15) cm-3 pure-type ; 10000 cm-3; 5*(10^15) cm-3 O Other:arrow_forwardIn a p-type semiconductor with a defect-rich surface the surface recombination velocity is 104 cm/s. (i) draw a schematic figure illustrating how the surface recombination flux changes with input light intensity; (ii) How does the surface recombination flux change with doping level?arrow_forward(a) Show that the resistivity of intrinsic germanium at 300 °K is 0.45 2.m if n₁ = 2.5×10¹⁹ m²³, n = 0.38 m²/V.s, p = 0.18 m²/v.s. -3 (b) If a donor-type impurity added to the extent of 1 atom per 108 germanium atoms, prove that the resistivity drops to 0.037 2.m. Density = 5.32x10³ Kg/m³, atomic weight 72.6.arrow_forward
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