Physics for Scientists and Engineers with Modern Physics, Technology Update
Physics for Scientists and Engineers with Modern Physics, Technology Update
9th Edition
ISBN: 9781305401969
Author: SERWAY, Raymond A.; Jewett, John W.
Publisher: Cengage Learning
Question
Book Icon
Chapter 43, Problem 28P

(a)

To determine

The quantity that fermi energy depends on according to free-electron theory of metals and the magnitude of dependency of the quantity.

(b)

To determine

To show that the equation of Fermi energy EF(0K)=h22me(3ne8π)23 can be expressed as EF=(3.65×1019)ne23, where EF is in electron volts when ne is in electrons per cubic meter.

(c)

To determine

The factor by which free electron concentration in exceed than in potassium using Table 43.2.

(d)

To determine

Whether copper or potassium have larger Fermi energy.

(e)

To determine

The factor by which Fermi energy of Cu is larger than K.

(f)

To determine

Whether the behavior is consistent with that predicted by equation EF(0K)=h22me(3ne8π)23.

Blurred answer
Students have asked these similar questions
(a) State what the Fermi energy depends on according to the free-electron theory of metals and how the Fermi energy depends on that quantity. (b) Show that Equation 42.23 can be expressed as EF = (3.65 x 10-19)ne 2/3, where EF is in electron volts when ne is in electrons per cubic meter. (c) According to Table 42.1, by what factor does the free-electron concentration in copper exceed that in potassium? (d) Which of these metals has the larger Fermi energy? (e) By what factor is the Fermi energy larger? (f) Explain whether this behavior is predicted by Equation 42.23.
Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 × 1017 cm-3 and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for donors is 0.0058 eV. The fraction of total electron that are still in the donor states?
Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?

Chapter 43 Solutions

Physics for Scientists and Engineers with Modern Physics, Technology Update

Knowledge Booster
Background pattern image
Similar questions
SEE MORE QUESTIONS
Recommended textbooks for you
Text book image
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
Text book image
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax
Text book image
Physics for Scientists and Engineers with Modern ...
Physics
ISBN:9781337553292
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning