Physics for Scientists and Engineers with Modern Physics, Technology Update
9th Edition
ISBN: 9781305401969
Author: SERWAY, Raymond A.; Jewett, John W.
Publisher: Cengage Learning
expand_more
expand_more
format_list_bulleted
Question
Chapter 43, Problem 5CQ
To determine
The physical explanation for the creation of electron-hole pair during the absorption of photon by semiconductor.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
A. Define the drift current in a semiconductor and give the mathematical
expressions about both the current density of the electron drift current and the current
density of the hole drift current. Define the diffusion current in a semiconductor and give
the mathematical expressions about both the current density of the hole diffusion current
and the current density of the electron diffusion current.
B. P-N junction is given. Please:
i) Draw the cross-section of this p-n junction and show the depletion region
and the corresponding electrical field for an applied external voltage V # 0 volts if the
positive terminal of the voltage source is connected to the n-side of the p-n junction and
the negative terminal of the voltage source is connected to the p-side of this p-n junction.
ii) Draw the cross-section of this p-n junction and show the depletion region
and the corresponding electrical field for an applied external voltage V # 0 volts if the
negative terminal of the voltage source is…
A semiconductor Hall probe has a Hall coefficient (RH) of -3.75 x 105 m³/C in the temperature
range of 130 K and 350 K. Its electrical conductivity is 150 (2.m)-¹.
A. Deduce, with explanation, the type of carriers in the semiconductor
B. Calculate the density and mobility of the charge carriers
C. Give 2 examples of Hall probe application and 2 material fabrication methods for Hall effect
proves.
Question 1
(a) Semiconductors are materials which have a conductivity between conductors. Based on your
knowledge, describe at least three particles that make up the atom and briefly describe the
difference between n-type and p-type semiconductor materials. Classify the three particles
that make up the atom and briefly describe the difference between n-type and p-type
semiconductor materials.
(b) Figure 1 shows a basic diode with p-type and n-type semiconductors with complete Voltage
Bias. Identify the depletion region when the diode is conducted in reverse bias. With the
aid of suitable diagram, briefly explain the region occur when the 5 V supply voltage is
аpplied.
p region
n region
VBIAS
Figure 1
(c) Figure 2 shows the class of materials based on relative comparisons. Based on Figure 2
description, identify the materials that affected the conduction and valence band. As an
engineer, explain the consequences if the atomic number of a neutral atom is 8, and the
maximum number of…
Chapter 43 Solutions
Physics for Scientists and Engineers with Modern Physics, Technology Update
Ch. 43.1 - For each of the following atoms or molecules,...Ch. 43.2 - Prob. 43.2QQCh. 43.2 - Prob. 43.3QQCh. 43 - Prob. 1OQCh. 43 - Prob. 2OQCh. 43 - Prob. 3OQCh. 43 - Prob. 4OQCh. 43 - Prob. 5OQCh. 43 - Prob. 6OQCh. 43 - Prob. 7OQ
Ch. 43 - Prob. 1CQCh. 43 - Prob. 2CQCh. 43 - Prob. 3CQCh. 43 - Prob. 4CQCh. 43 - Prob. 5CQCh. 43 - Prob. 6CQCh. 43 - Prob. 7CQCh. 43 - Prob. 8CQCh. 43 - Discuss models for the different types of bonds...Ch. 43 - Prob. 10CQCh. 43 - Prob. 1PCh. 43 - Prob. 2PCh. 43 - Prob. 3PCh. 43 - Prob. 4PCh. 43 - Prob. 5PCh. 43 - Prob. 6PCh. 43 - Prob. 7PCh. 43 - Prob. 8PCh. 43 - Prob. 9PCh. 43 - Prob. 10PCh. 43 - Prob. 12PCh. 43 - Prob. 13PCh. 43 - Prob. 14PCh. 43 - Prob. 15PCh. 43 - Prob. 16PCh. 43 - The nuclei of the O2 molecule are separated by a...Ch. 43 - Prob. 18PCh. 43 - Prob. 19PCh. 43 - Prob. 20PCh. 43 - Prob. 21PCh. 43 - Prob. 22PCh. 43 - Prob. 23PCh. 43 - Prob. 24PCh. 43 - Prob. 25PCh. 43 - Prob. 27PCh. 43 - Prob. 28PCh. 43 - Prob. 29PCh. 43 - Prob. 30PCh. 43 - Prob. 31PCh. 43 - Prob. 32PCh. 43 - Prob. 33PCh. 43 - Prob. 34PCh. 43 - Prob. 35PCh. 43 - Prob. 36PCh. 43 - Prob. 37PCh. 43 - Prob. 38PCh. 43 - Prob. 39PCh. 43 - Prob. 40PCh. 43 - Prob. 41PCh. 43 - Prob. 42PCh. 43 - Prob. 43PCh. 43 - Prob. 44PCh. 43 - Prob. 45PCh. 43 - Prob. 46PCh. 43 - Prob. 47PCh. 43 - Prob. 49PCh. 43 - Prob. 50PCh. 43 - Prob. 51PCh. 43 - A direct and relatively simple demonstration of...Ch. 43 - Prob. 53PCh. 43 - Prob. 54APCh. 43 - Prob. 55APCh. 43 - Prob. 56APCh. 43 - Prob. 57APCh. 43 - Prob. 58APCh. 43 - Prob. 59APCh. 43 - Prob. 61APCh. 43 - Prob. 62APCh. 43 - Prob. 63CPCh. 43 - As an alternative to Equation 43.1, another useful...
Knowledge Booster
Similar questions
- A docs.google.com/forms/d/e. Marks 8 The temperature term isn't a part of the .total current density in a semiconductor True False The random motion of holes and free electrons due to thermal agitation is called .drift True False Under the equilibrium conditions, the number of holes which are thermally generated is equal to the holes lost by .recombination True False II >arrow_forwardAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forwardDescribe an extrinsic semiconductor material. What is the value or the electron concentration in an n-type material, and what is the value of the hole concentration in a p-type material?arrow_forward
- Photon energy of the light with a given wavelength could be calculated by the following equation (attached in this QnA post):*hint: wavelength of light is not in SI unit, unit conversion is needed. What is the band gap of the semiconductor, if it can only be excited by the light with wavelength equal to or smaller than 500 nm?*hint: the photon energy needs to be greater or equal to the band gap, in order to excite the semiconductorarrow_forwardd. What is the population inversion condition in semiconductor laser? How can you obtain population inversion condition? e. Draw and describe a typical structure of avalanche photodiode? Why do they make a p+ layer located at the encounter electrode?arrow_forwardExplain the difference between a conductor, an insulator, and a semiconductor. Give an example of each to illustrate your comparison.arrow_forward
- GaAs is utilized to manufacture infrared light-emitting diodes (LEDs). The band gap is 1.42 eV, and the effective masses of electrons and holes are 0.067 and 0.45 of the free-electron mass, respectively.a. Calculate the intrinsic electron and hole concentration of pure GaAs at room temperature.b. What is the carrier concentration intrinsic?c. Where is the Fermi energy level located?arrow_forwardDo you know how a diode and an LED are related to semiconductors? Use a diagram with a short explanation of the symbol.arrow_forwardQuestion 1 a) Ina closed circuit, an electric current of intensity i goes through a resistor of resistance R. The electric potential at the edges of R is measured to be V. If now we write R would this generally bethe definition ofthe resistance quantity R, or the expression of Ohm's Law? Explain. b) We define the resistivity (via the familiar notation) as E p= Thus show that the resistance R can be written as, R =p- here Lis the length ofthe resistor, and A is the cross-sectional area ofit. c) Let J the curent density (i/A). Express J in tems of the electron density n (electrons/m), the electron drift velocity va, and the electron charge e. d) Show that the resistivity can be expressed (via the familiar notation) as, m p= ne't here m is the electronmass; t is the period of time that elapses between two subsequent collisions, the electron undergoes with copper nuclei throughout its chaotic motion in the body of copper (supposing that the current carrying cable is made of copper). Hint:…arrow_forward
- A silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.arrow_forwardexist is for valence electrons to "leap" into the conduction band with the Enoiteou Question 5 pplication of sufficient energy, legving a hole, or vacancy, behind in the valence band: Valence electron leaping into conduction band Conduction band valence band With sufficient thermal energy, these electron-hole pairs will form spontaneously. Af room temperature, however, this activity is slight. we may greatly enhance charge carrier formation by adding specific impurities to the semiconducting material. The energy states of atoms having different electron configurations do not precisely "blend" with the electron bands of the parent semiconductor crystal, causing additional energy levels to form. Some types of impurities will cause extra donor electrons to lurk just beneath the main conduction band of the crystal. These types of impurities are called pentavalent, because they have 5 valence electrons per atom rather than 4 as the parent substance typically possesses: Doped with a…arrow_forwardExplain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of materialarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Physics for Scientists and Engineers with Modern ...PhysicsISBN:9781337553292Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Glencoe Physics: Principles and Problems, Student...PhysicsISBN:9780078807213Author:Paul W. ZitzewitzPublisher:Glencoe/McGraw-Hill
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
Physics for Scientists and Engineers with Modern ...
Physics
ISBN:9781337553292
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Glencoe Physics: Principles and Problems, Student...
Physics
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Glencoe/McGraw-Hill