UNIVERSITY PHYSICS,VOL.3 (OER)
17th Edition
ISBN: 2810020283905
Author: OpenStax
Publisher: XANEDU
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Textbook Question
Chapter 9, Problem 28CQ
For an n-type semiconductor, how do impurity atoms alter the energy structure of the solid?
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A ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As
atoms in this crystal will be:
O 3.641e24 /cm^3
2.048e30 /cm^3
O 1.821e24 /cm^3
O 3.550e16 /cm^3
O 1.593e24 /cm^3
how does a semiconductor behaves at 0K? Explain your answer.
In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid.
(a) At what temperature must the boron-doping process be operated? It is known
that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by
Where Do=0.019 cm2/s and Qo=2.74 x 105…
Chapter 9 Solutions
UNIVERSITY PHYSICS,VOL.3 (OER)
Ch. 9 - Check Your Understanding Why is the potential...Ch. 9 - Check Your Understanding What does the energy...Ch. 9 - Check Your Understanding If the dissociation...Ch. 9 - Check Your Understanding What happens to the...Ch. 9 - Check Your Understanding How does the magnitude of...Ch. 9 - Check Your Understanding What conditions are...Ch. 9 - What is the main difference between an ionic bond,...Ch. 9 - For the following cases, what type of bonding...Ch. 9 - Describe three steps to ionic bonding.Ch. 9 - What prevents a positive and negative ion from...
Ch. 9 - For the H2 molecule, why must the spins the...Ch. 9 - Does the absorption spectrum of the diatomic...Ch. 9 - Rank the energy spacing (E) of the following...Ch. 9 - Explain key features of a vibrational-rotation...Ch. 9 - Why is tbe equilibrium separation distance between...Ch. 9 - Describe the difference between a face-centered...Ch. 9 - In sodium chloride, how many Clatoms are “nearest...Ch. 9 - In cesium iodide, how many Clatoms are "nearest...Ch. 9 - The NaCl crystal structure is FCC. The equilibrium...Ch. 9 - Why does the Fermi energy (EF) increase with the...Ch. 9 - If the election number density (N/V) of a metal...Ch. 9 - Why does the horizontal Line in the graph in...Ch. 9 - Why does the graph in Figure 9.12 increase...Ch. 9 - Why are the sharp transitions at the Fermi energy...Ch. 9 - What are the two main approaches used to determine...Ch. 9 - Describe two features of energy levels for an...Ch. 9 - How does the number of energy levels in a band...Ch. 9 - Why are some materials very good conductors and...Ch. 9 - Why are some materials semiconductors?Ch. 9 - Why does the resistance of a semiconductor...Ch. 9 - What kind of semiconductor is produced if...Ch. 9 - What kind of semiconductor is produced if silicon...Ch. 9 - What is the Hall effect and what is it used for?Ch. 9 - For an n-type semiconductor, how do impurity atoms...Ch. 9 - For a p-type semiconductor, how do impurity atoms...Ch. 9 - When p- and n-type materials are joined, why is a...Ch. 9 - When p- and n-type materials are joined, why does...Ch. 9 - How do you know if a diode is in the forward...Ch. 9 - Why does the reverse bias configuration lead to a...Ch. 9 - What happens in the extreme case that where the n-...Ch. 9 - Explain how an audio amplifier works, using the...Ch. 9 - Describe two main features of a superconductor.Ch. 9 - How does BCS theory explain superconductivity?Ch. 9 - What is the Meissner effect?Ch. 9 - What impact does an increasing magnetic field have...Ch. 9 - The electron configuration of carbon is 1s22s22p2....Ch. 9 - Potassium chloride (KCl) is a molecule formed by...Ch. 9 - The electron affinity of Cl is 3.89 eV and the...Ch. 9 - The measured energy dissociated energy of KC1 is...Ch. 9 - In a physics lab, you measure the vibrational-...Ch. 9 - For the preceding problem, find the equilibrium...Ch. 9 - The separation between oxygen atoms in an O2...Ch. 9 - The characteristic energy of the N2 molecule is...Ch. 9 - The characteristic energy for KCl is 1.4105eV ....Ch. 9 - A diatomic F2 molecule is in the l = 1 state, (a)...Ch. 9 - In a physics lab, you measure the vibrational-...Ch. 9 - The Csl crystal structure is BCC. The equilibrium...Ch. 9 - The potential energy of a crystal is - 8.10 eV/ion...Ch. 9 - The measured density of a NaF crystal is 2.558...Ch. 9 - What value of the repulsion constant, n, gives the...Ch. 9 - Determine the dissociation energy of 12 moles of...Ch. 9 - The measured density of a KCl crystal is 1.984...Ch. 9 - What value of the repulsion constant, n, gives the...Ch. 9 - The measured density of a CsCl crystal is 3.988...Ch. 9 - What is the difference in energy between the...Ch. 9 - An electron is confined to a metal cube of I = 0.8...Ch. 9 - What value of energy corresponds to a density of...Ch. 9 - Compare the density of states at 2.5 eV and 0.25...Ch. 9 - Consider a cube of copper with edges 1.50 mm long....Ch. 9 - If there is one free electron per atom of copper,...Ch. 9 - Determine the Fermi energy and temperature for...Ch. 9 - For a one-dimensional crystal, write the lattice...Ch. 9 - What is the main difference between an insulator...Ch. 9 - What is the longest wavelength for a photon that...Ch. 9 - A valence electron in a crystal absorbs a photon...Ch. 9 - An experiment is performed to demonstrate the Hall...Ch. 9 - Suppose that the cross-sectional area of the strip...Ch. 9 - A current-carrying copper wire with cross-section...Ch. 9 - The Hall effect is demonstrated in the laboratory....Ch. 9 - Show that for V less than zero, InetI0.Ch. 9 - A p-n diode has a reverse saturation current...Ch. 9 - The collector current of a transistor is 3.4 A for...Ch. 9 - Applying the positive end of a battery to the...Ch. 9 - The base current of a transistor is 4.4 A, and its...Ch. 9 - At what temperature, in terms of Tc, is the...Ch. 9 - What is the critical magnetic field for lead at T...Ch. 9 - A Pb wire wound in a tight solenoid of diameter of...Ch. 9 - A tightly wound solenoid at 4.0 K is 50 cm long...Ch. 9 - Potassium fluoride (KF) is a molecule formed by...Ch. 9 - For the preceding problem, sketch the potential...Ch. 9 - The separation between hydrogen atoms in a H2...Ch. 9 - The characteristic energy of the Cl2 molecule is...Ch. 9 - Determine the lowest three rotational energy...Ch. 9 - A carbon atom can hybridize in the...Ch. 9 - List five main characteristics of ionic crystals...Ch. 9 - Why is bonding in favorable? Express your answer...Ch. 9 - Astronomers claim to find evidence of He2 from...Ch. 9 - Show that the moment of inertia of a diatomic...Ch. 9 - Show that the average energy of an electron in a...Ch. 9 - Measurements of a superconductor's critical...Ch. 9 - Estimate the fraction of Si atoms that must be...Ch. 9 - Transition in the rotation spectrum are observed...Ch. 9 - Determine the Fermi energies for (a) Mg, (b) Na,...Ch. 9 - Find the average energy of an electron in a Zn...Ch. 9 - What value of the repulsion constant, n, gives the...Ch. 9 - A physical model of a diamond suggests packing...Ch. 9 - For an electron in a three-dimensional metal, show...
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- In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmarrow_forwardThe electron energy near the top of the valence band in a semiconductor is given by E=-10^(-37)k^3J. Calculate Effective mass, energy, momentum, velocityarrow_forwardWhat is the essential characteristic for an element to serve as a donor impurity in a semiconductor such as Si or Ge? For it to serve as an acceptor impurity? Explain.arrow_forward
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