Find the resistivity of (a) intrinsic silicon and (b) p-type silicon with N, = 1.0 × 10“/cm'. For the intrinsic silicon, assume that u. 1350 cm³/N - s and H, = 480 cm³N s. For the doped silicon, assume that l. = 1110 cm³/V -s and H, = 400 cm³/V - s.
Find the resistivity of (a) intrinsic silicon and (b) p-type silicon with N, = 1.0 × 10“/cm'. For the intrinsic silicon, assume that u. 1350 cm³/N - s and H, = 480 cm³N s. For the doped silicon, assume that l. = 1110 cm³/V -s and H, = 400 cm³/V - s.
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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