Find the values of n, per cubic centimeter for silicon [E=1.12 eV] at T= 300 energy is 0.22 eV above the valence band energy [ Nc=2.8x1018 cm³].
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Q: cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.
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- For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).
- Calculate the conductivity of an intrinsic silicon at room temperature. If ten electrons out of 1010 electrons in Valence Band move to Conduction Band. Given the silicon density is (2.33×10 Kg/m³), the silicon atomie weight is (28.086), the electrons mobility is (0.15 m/V.sec.), and the holes mobility is (0.05 m2/V.sec.).Find the equilibrium electron and hole concentration and the location of the Fermi level for a silicon sample at27∘Cdoped uniformly with5×1015 cm−3phosphorus atoms and4×1015 cm−3boron atoms.Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meV
- Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.For silicon at T = 300 K, calculate the equilibrium electron concentration in cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.In a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2p subshell of the isolated silicon atom?
- How could you make compensated silicon that has twice as many acceptors as donors?What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.What is the probability that, at a temperature of T = 300 K, an electron will jump across the energy gap Eg (= 5.5 eV) in a diamond that has a mass equal to the mass of Earth? Use the molar mass of carbon in Appendix F; assume that in diamond there is one valence electron per carbon atom.