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Consider a uniformly doped GaAs pn junction with doping concentrations of
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Microelectronics: Circuit Analysis and Design
- Q: P. type semiconductor with length (I= 5mm), the cross-section area of (A = 0.5m * m ^ 2) , and resistance (R=25092). Calculate the exact number of the majority (p p ) and the minority (n p ) carriers. Also, calculate the number of acceptor atoms (N A ) if the intrinsic carrier (n i =2*10^ 20 /m^ 3 ) . Given the mobility for the electrons mu i =0.4m^ 2 /V.s) and for the holes ( mu k =0.2m^ 2 /V ,s )arrow_forwardA cathodic protection system is to be designed for a 600 m long and 110 mm diameter buried pipeline coated with fusion bonded epoxy (FBE). The current density required for FBE coated structures is 0.18 mA/m^2. It is required to use horizontal anodes 8 ft. below the ground with 15 ft. spacing. The anode material available is high silicon-cast iron with a consumption rate of 0.5 kg/A-yr. The diameter and length of anodes are 30 cm and 300 cm respeqtively. The weight of each anode is 50 kg. Anode to soil resistance is measured to be 0.24 ohm. The soil resistivity is 2,500 ohm-cm. It is aimed to protect the structure for a period of 22 years. In order to design this CP system, determine, (a) Current required (A) (b) Total number of anodes (c) Total resistance (d) The potential (E) for protection (e) Total power required for this CP system.arrow_forwardA (10 K12) resistor is made of two strips connected in parallel, each one has (40 um) thick, and (6 mm) long. One strip is of intrinsic germanium and has (0.5 mm) wide. Determine the width of other strip if it made of Ge., doped with (1021) donor atom/cm”,at the working temperature. The intrinsic carrier density of Ge, is (2.5*10" m3), and the electron and hole mobilities are (0.4 m²/V.Sec. , and 0.2 m²/V.Sec.) respectivelyarrow_forward
- Given a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.arrow_forwardAn abrupt silicon junction of area 0.003 cm2 has the following parameters: ND = 2 * 10^18 cm-3 (n-side) and NA = 2 * 10^16cm-3 (p-side)a) Calculate the difference between the Fermi level and the intrinsic Fermi level onboth sides.b) Calculate the built-in potential at the junction in equilibrium and the depletionwidth.c) Draw and label the band diagram.d) Determine the total number of exposed accepters in the depletion region.arrow_forwardA silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.arrow_forward
- A 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.arrow_forwardTrue or false a.A p-n junction has a variable capacitance depending on bias. b.n a depletion mode MOSFET the channel is created by implantation of ions not gate bias. c.Diffusion capacitance is zero if the diode length is longer than the diffusion length. d.We can accurately predict the energy and time of an electron. e.. Avalanche breakdown occurs if the potential barrier is narrow, allowing for tunneling of carriers f.For an Schottky contact there is a higher concentration of majority carriers at the interface g.Current can flow between source and drain with a gate bias, VG=0 in an enhancement modeMOSFET. h.To achieve forward active mode in an NPN bipolar junction transistor, the base-emitter voltage must be forward biased and the base-collector voltage must be reverse biased to ensure that electrons from the emitter make it to the collector. i.The Early Effect causes a decrease in IC with increased VC as the depletion region from the collector extends significantly into the basearrow_forwardConsider a gallium arsenic (GaAS) sample at T=300 K,with doping concentrations of NA=1017 cm-3 and ND=0. Assume complete ionization: a) Calculate the drift current density if the applied electric field is E=10 V/cm. b) Calculate the resistivity of the semiconductor.arrow_forward
- A lightly-doped p-type Si region has a hole concentration of 1*10^11 cm-3 at a temperature of 320 K. Assume the hole mobility is 470 cm^2/Vs and the electron mobility is 1430 cm^2/Vs at 320 K. The bandgap of Si is 1.12 eV. Calculate the resistivity of this Si region at 320 K.arrow_forwardA diffused silicon PN junction has a linearly graded junction in the P-side with ?=10^19cm−3, and a uniform doping of 3×10^14 cm−3on the N-side. If the depletion layer width of the P-side is 0.8μm at zero bias, find the total depletion layer width, built-in potential, maximum field at zero bias and sketch the potential distribution.arrow_forwardQ: P. type semiconductor with length (I=5mm), the cross-section area of (A=0.5 mm^ 2 ). , and resistance (R = 250Omega) . Calculate the exact number of the majority (p p ) and the minority (n p ) carriers. Also, calculate the number of acceptor atoms (N A ) if the intrinsic carrier ( Pi j =2*10^ 20 /m^ 7 ) . Given the mobility for the electrons ( mu k =0.4m^ 2 /V.s) and for the holes ( mu 1 =0.2m^ 2 N.s) Note: use these equations to solve the problem. sigma tp = sigma e + sigma ll =n p e mu e +p p e ll n i ^ 2 =n p p p Compare your results if you use this equation instead for sigma tp with sigma tp = sigma p =p p e mu harrow_forward
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