Concept explainers
Calculate the intrinsic carrier concentration in silicon and germanium at (a)
a.
The intrinsic carrier concentration in silicon and germanium for the given temperature.
Answer to Problem 1.3P
The intrinsic carrier concentration for silicon at T = 100 K is
The intrinsic carrier concentration for germanium at T = 100 K is
Explanation of Solution
Given Information:
The given temperature is
Calculation:
The intrinsic carrier concentration for semiconductor material is:
B is a constant related to the specific semiconductor material.
T = temperature (K)
K = Boltzmann’s constant
The value of B for silicon is
The intrinsic carrier concentration for silicon is determined as follows:
The intrinsic carrier concentration for germanium is determined as follows:
b.
The intrinsic carrier concentration in silicon and germanium for the given temperature.
Answer to Problem 1.3P
The intrinsic carrier concentration for silicon is at T = 300 K
The intrinsic carrier concentration for germanium is at T = 300 K
Explanation of Solution
Given Information:
The given temperature is
Calculation:
The intrinsic carrier concentration for semiconductor material is:
B is a constant related to the specific semiconductor material.
T = temperature (K)
K = Boltzmann’s constant
The value of B for silicon is
The intrinsic carrier concentration for silicon is determined as follows:
The intrinsic carrier concentration for germanium is determined as follows:
c.
The intrinsic carrier concentration in silicon and germanium.
Answer to Problem 1.3P
The intrinsic carrier concentration for silicon is at T = 500 K
The intrinsic carrier concentration for germanium is at T = 500 K
Explanation of Solution
Given Information:
The given temperature is
Calculation:
The intrinsic carrier concentration for semiconductor material is:
B is a constant related to the specific semiconductor material.
T = temperature (K)
K = Boltzmann’s constant
The value of B for silicon is
The intrinsic carrier concentration for silicon is determined as follows:
The intrinsic carrier concentration for germanium is determined as follows:
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Chapter 1 Solutions
Microelectronics: Circuit Analysis and Design
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