Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Concept explainers
Textbook Question
Chapter 1, Problem 1.40P
The diode in the circuit shown in Figure P1.40 has a reverse−saturation current of
Figure P1.40
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
In the circuit shown in Figure 2–41 (p. 94), the current I is 34.28 mA. What is the voltage drop across the diode? What is its dc resistance?
Q1
(a) For the given circuit in Figure Q1.1,
(i) Describe the diode representation as a switch
(ii) Identify the condition of the diode and its equivalent circuit.
(iii) Calculate ID, VR1, VR2 and Vo with the diode represent as a switch.
(iv) Perform the same calculation as (ii) for GaAs diode.
Determine zener diode voltage value as well as the ripple percentage pf teh circuit below with 240Vpp.
Please answer it with clear and complete solution. Thank you.
This subject is Electronics 1.
Chapter 1 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...
Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- please answer (vii) that is the graph Calculate the following about the circuit in Figure 2.1 (If silicon diodes are employed in the rectification); i. the peak value of the output voltage considering the drop across each diode, Vpk. ii. the average voltage, Vdc. iii. The current through the load resistor, IL. iv. The current diode, Id. v. The frequency of the output signal, Fout. vi. Calculate the efficiency of the full wave rectifier expressed in percentage. vii. Sketch a graph of the input and output voltage against time.arrow_forwardb. Calculate the following about the circuit in Figure 2.1 (If silicon diodes are employed in therectification);i. the peak value of the output voltage considering the drop across each diode, Vpk.ii. the average voltage, Vdc.iii. The current through the load resistor, IL.iv. The current diode, Id.v. The frequency of the output signal, Fout.vi. Calculate the efficiency of the full wave rectifier expressed in percentage.vii. Sketch a graph of the input and output voltage against time.arrow_forwardCompare the result of using a VIRTUAL DIODE vs 1N4001. Please explain.arrow_forward
- Given this circuit: A voltmeter is placed across the diode and its reading is 15V, Determine whether the diode is functioning properly or not. (Assume Ideal Diode, Forward voltage of diode=0V) Hi! I need answer ASAP. Thank youuu!arrow_forwardAssume a silicon diode has a maximum power rating of 2 watts. How much current can it safely pass? I= ? [A]arrow_forwardDetermine zener diode voltage value as well as the ripple percentage of the circuit below with 240Vpp. Please answer it clear with complete solutions. Thank you. This subject is Electronics 1.arrow_forward
- Draw the V-I characteristic curve of a Ge based Zener diode with Zener breakdown voltage (?z=5 ?). Indicate three different regions of the curve. Subject: Electronic devicesarrow_forward(I) Determine the average ac resistance for the diode of the Figure below for the region between 0.6 V and 0.9 V. (II) Then determine the ac resistance for the diode of the Figure below at 0.75 V and compare it to the average ac resistance obtained in (I).arrow_forwardWhat is the dynamic resistance of a diode if its ID = 2.48 mA? No need for a solution. Just write your numeric answer in the space provided. Round off your answer to 2 decimal places.arrow_forward
- Consider the battery-charging circuit shown in Figure 9.25 on page 476, in which vs(t) = 20 sin(200πt) , R = 80 Ω , VB = 12 V and the diode is ideal. a. Sketch the current i(t) to scale versus time. b. Determine the average charging current for the battery.arrow_forwardDetermine the conduction state of the ideal diode in the circuit given in Figure 3. Y=3arrow_forwardaccepting that D1 and D2 diodes have the same properties in the circuit given in the figurea) output voltage, b) current flowing through the resistor,c) current flowing from diodes calculate.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Diodes Explained - The basics how diodes work working principle pn junction; Author: The Engineering Mindset;https://www.youtube.com/watch?v=Fwj_d3uO5g8;License: Standard Youtube License