Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 10, Problem D10.11P
To determine
The design parameters of the circuit and the value of
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In the common emitter amplifier, R1 = 50Ω, R2 = 1kΩ, and CL=1 pF. Determine the quiescent collector current, ICQ, needed such that the unity gain frequency, fu, = 1 GHz. Show your complete solution and state all your assumptions.
For each transistor shown in Figure P10.1,determine whether the BE and BC junctions areforward- or reverse-biased, and determine theoperating region.
What are the values of Add, Acd, and CMRR for the amplifier shown if ISS = 150 μA, RSS = 25 MΩ, Kn = Kp = 500 μA/V2, VTN = 1 V, and VTP =−1 V and λ = 0.02 V−1 for both transistors?
Chapter 10 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 10 - The circuit parameters for the two-transistor...Ch. 10 - Consider the circuit shown in Figure 10.3. The...Ch. 10 - The parameters of the circuit shown in Figure 10.5...Ch. 10 - Consider the Widlar current source in Figure 10.9....Ch. 10 - Consider the circuit in Figure 10.10. Assume the...Ch. 10 - A Widlar current source is shown in Figure 10.9....Ch. 10 - Figure 10.12 shows the N-output current mirror....Ch. 10 - Prob. 10.1TYUCh. 10 - Prob. 10.2TYUCh. 10 - For the Wilson current source in Figure 10.8, the...
Ch. 10 - Prob. 10.4TYUCh. 10 - Prob. 10.8EPCh. 10 - Prob. 10.9EPCh. 10 - Consider the JFET circuit in Figure 10.24. The...Ch. 10 - Consider Design Example 10.8. Assume transistor...Ch. 10 - The bias voltages of the MOSFET current source in...Ch. 10 - Prob. 10.7TYUCh. 10 - All transistors in the MOSFET modified Wilson...Ch. 10 - A simple BJT amplifier with active load is shown...Ch. 10 - Prob. 10.9TYUCh. 10 - Prob. 10.10TYUCh. 10 - Prob. 10.11TYUCh. 10 - Prob. 10.12EPCh. 10 - For the circuit in Figure 10.40(a), the transistor...Ch. 10 - Prob. 10.12TYUCh. 10 - Repeat Example 10.12 for the case where a resistor...Ch. 10 - Prob. 10.14TYUCh. 10 - Prob. 1RQCh. 10 - Explain the significance of the output resistance...Ch. 10 - Prob. 3RQCh. 10 - Prob. 4RQCh. 10 - What is the primary advantage of a BJT cascode...Ch. 10 - Prob. 6RQCh. 10 - Can a piecewise linear model of the transistor be...Ch. 10 - Prob. 8RQCh. 10 - Sketch the basic MOSFET two-transistor current...Ch. 10 - Discuss the effect of mismatched transistors on...Ch. 10 - Prob. 11RQCh. 10 - Sketch a MOSFET cascode current source circuit and...Ch. 10 - Discuss the operation of an active load.Ch. 10 - What is the primary advantage of using an active...Ch. 10 - Prob. 15RQCh. 10 - What is the impedance seen looking into a simple...Ch. 10 - What is the advantage of using a cascode active...Ch. 10 - Prob. 10.1PCh. 10 - The matched transistors Q1 and Q2 in Figure...Ch. 10 - Prob. 10.3PCh. 10 - Reconsider the circuit in Figure 10.2(a). Let...Ch. 10 - Prob. 10.5PCh. 10 - The transistor and circuit parameters for the...Ch. 10 - The bias voltages in the circuit shown in Figure...Ch. 10 - Consider the current source in Figure 10.2(b). The...Ch. 10 - Prob. 10.9PCh. 10 - Prob. 10.10PCh. 10 - Prob. D10.11PCh. 10 - In the circuit in Figure P10.11, the transistor...Ch. 10 - Prob. D10.13PCh. 10 - Consider the circuit shown in Figure P 10.14. The...Ch. 10 - Design a basic two-transistor current...Ch. 10 - The values of for the transistors in Figure P10.16...Ch. 10 - Consider the circuit in Figure P10.17. The...Ch. 10 - All transistors in the N output current mirror in...Ch. 10 - Design a pnp version of the basic three-transistor...Ch. 10 - Prob. D10.20PCh. 10 - Consider the Wilson current source in Figure...Ch. 10 - Consider the circuit in Figure P10.22. The...Ch. 10 - Consider the Wilson current-source circuit shown...Ch. 10 - Consider the Widlar current source shown in Figure...Ch. 10 - Prob. 10.25PCh. 10 - Consider the circuit in Figure P10.26. Neglect...Ch. 10 - (a) For the Widlar current source shown in Figure...Ch. 10 - Consider the Widlar current source in Problem...Ch. 10 - (a) Design the Widlar current source such that...Ch. 10 - Design a Widlar current source to provide a bias...Ch. 10 - Design the Widlar current source shown in Figure...Ch. 10 - The circuit parameters of the Widlar current...Ch. 10 - Consider the Widlar current source in Figure 10.9....Ch. 10 - Consider the circuit in Figure P10.34. The...Ch. 10 - The modified Widlar current-source circuit shown...Ch. 10 - Consider the circuit in Figure P10.36. Neglect...Ch. 10 - Consider the Widlar current-source circuit with...Ch. 10 - Assume that all transistors in the circuit in...Ch. 10 - In the circuit in Figure P10.39, the transistor...Ch. 10 - Consider the circuit in Figure P10.39, with...Ch. 10 - Consider the circuit shown in Figure P10.41....Ch. 10 - For the circuit shown in Figure P 10.42, assume...Ch. 10 - Consider the circuit in Figure P10.43. The...Ch. 10 - Consider the MOSFET current-source circuit in...Ch. 10 - The MOSFET current-source circuit in Figure P10.44...Ch. 10 - Consider the basic two-transistor NMOS current...Ch. 10 - Prob. 10.47PCh. 10 - Consider the circuit shown in Figure P10.48. Let...Ch. 10 - Prob. 10.49PCh. 10 - The circuit parameters for the circuit shown in...Ch. 10 - Prob. 10.51PCh. 10 - Figure P10.52 is a PMOS version of the...Ch. 10 - The circuit shown in Figure P10.52 is biased at...Ch. 10 - The transistor circuit shown in Figure P10.54 is...Ch. 10 - Assume the circuit shown in Figure P10.54 is...Ch. 10 - The circuit in Figure P 10.56 is a PMOS version of...Ch. 10 - The transistors in Figure P10.56 have the same...Ch. 10 - Consider the NMOS cascode current source in Figure...Ch. 10 - Consider the NMOS current source in Figure P10.59....Ch. 10 - Prob. 10.60PCh. 10 - The transistors in the circuit shown in Figure...Ch. 10 - A Wilson current mirror is shown in Figure...Ch. 10 - Repeat Problem 10.62 for the modified Wilson...Ch. 10 - Prob. 10.64PCh. 10 - Prob. 10.65PCh. 10 - Prob. D10.66PCh. 10 - Prob. D10.67PCh. 10 - The parameters of the transistors in the circuit...Ch. 10 - Prob. 10.69PCh. 10 - Consider the circuit shown in Figure P10.70. The...Ch. 10 - Prob. 10.71PCh. 10 - Prob. D10.72PCh. 10 - Prob. 10.73PCh. 10 - Prob. D10.74PCh. 10 - Prob. 10.75PCh. 10 - For the circuit shown in Figure P10.76, the...Ch. 10 - Prob. 10.77PCh. 10 - Prob. 10.78PCh. 10 - The bias voltage of the MOSFET amplifier with...Ch. 10 - Prob. 10.80PCh. 10 - Prob. 10.81PCh. 10 - Prob. 10.82PCh. 10 - A BJT amplifier with active load is shown in...Ch. 10 - Prob. 10.84PCh. 10 - Prob. 10.85PCh. 10 - Prob. 10.86PCh. 10 - The parameters of the transistors in Figure P10.87...Ch. 10 - The parameters of the transistors in Figure P10.88...Ch. 10 - A BJT cascode amplifier with a cascode active load...Ch. 10 - Design a bipolar cascode amplifier with a cascode...Ch. 10 - Design a MOSFET cascode amplifier with a cascode...Ch. 10 - Design a generalized Widlar current source (Figure...Ch. 10 - The current source to be designed has the general...Ch. 10 - Designa PMOS version of the current source circuit...Ch. 10 - Consider Exercise TYU 10.10. Redesign the circuit...
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- Given the circuit of Figure P10.3, determine theoperating point of the transistor. Assume the BJT is a silicon device with β = 100. In what region is the transistor?arrow_forwardPlease answer correctly and as soon as possible. I'll give upvote. Thank you. In the common emitter amplifier given, R1=50Ω, R2=1kΩ and CL=1pF. Determine the quiescent collector current, ICQ, needed such that the unity gain frequency, fu, is equal to 2.4 GHz. Show the complete solution and state all assumptions. The BJT parameters are as follows: β→∞,VA→∞, and Cπ=50 femtofarad (fF). Ignore all other parasitic capacitances and use VT=26mV.arrow_forward1) Find the operating point of the transistor by drawing the load line of the BJT transistor circuit given below. Calculate the voltage values VE and VC. (β = 100, VBE = 0.7 V, R1 = 10 KΩ, RC = 4.7 KΩ, RE = 3.3 KΩ, VCC = 10 V, VEE = - 4 V)arrow_forward
- What are the values of Add, Acd, and CMRR for the amplifier shown if ISS = 600 μA, RSS = 10 MΩ, Kn = Kp = 500 μA/V2, VTN =− VTP = 1 V, and λ = 0.015/V for both transistors? What are the minimum power supply voltages if the common-mode input range must be ±5 V? Assume symmetrical supply voltages.arrow_forward(a) What is the output current IO in the circuit as shown if −VEE = −15 V and R = 15ohm ?Assume that the BJT is in the forward-active reregionand βF = 30. (b) What is the voltage at theoutput of the operational amplifier if the saturationcurrent IS of the BJT is 10−13 A? (c) Whatis the minimum voltage VCC needed for forwardactiveregion operation of the bipolar transistor?(d) Find the power dissipation rating of the resistorR. How much power is dissipated in thetransistor if VCC = 15 V?arrow_forwardThe common-emitter amplifier given in the figure in the circuit, Vcc=9V, R1=27kΩ, R2=15kΩ, RE=1.2kΩ and RC=2.2kΩ. Transistor β=100 has value. a-) If it has values of Rsig=10kΩ and RL=2kΩ Calculate the IE of the amplifier. b-) For small signal analysis of transistor Find the value of Rin by deriving the π-model c-) Calculate vo/vsig and io/ii.arrow_forward
- Consider the emitter follower in Figure 1 with VCC = 10V, I = 100 mA, and RL = 100Ω. (a) Find the power dissipated in Q1 and Q2 under quiescent conditions. (vO = 0V) (b) For a sinusoidal output voltage of maximum possible amplitude (neglecting VCEsat ), find the average power dissipation in Q1 and Q2. Also find the load power.arrow_forwardIn the common-emitter amplifier circuit shown in the figure, Vcc=9V, R1=27kΩ, R2=15kΩ, RE=1.2kΩ and RC=2.2kΩ. The transistor has β=100.a-) If Rsig=10kΩ and RL=2kΩ, calculate the IE value of the amplifier.b-) For small signal analysis of the transistor, find the value of Rin by deriving the π-modelc-) Calculate vo/vsig and io/ii.arrow_forwardIn an amplifier circuit, why do we need to bias the MOSFET at an operating point? What would happen if the signal peak amplitude was smaller than 1 V, the transistor had Vto=1 V and we biased the transistor at VGSQ = 0.?arrow_forward
- (a) Does the MOSFET as shown remain in the active region of operation during the full-output signal swing? (b) If the dc drain current of the MOSFET in the active region is given by ID = (Kn/2)(VGS − VTN)2, what are the values of the parameter Kn and threshold voltage VTN for the transistor shown? (c) Express the amplifier voltage given in dB.arrow_forward(a) What are the Q-points for the transistors in the amplifier as shown if VDD = 9 V, VSS = 9 V, ISS = 40 μA, RSS = 1.25 MΩ, and RD = 300 kΩ? Assume Kp = 200 μA/V2, γ = 0.6 V0.5, 2φF = 0.6 V, and VTO = −1 V. (b) What are the differential-mode gain, common-mode gain, CMRR, and differential-mode and common-mode input resistances?arrow_forward(a) What are the Q-points for the transistors in the amplifier as shown if VCC = 15 V, VEE = 15 V, IEE = 400 μA, βF = 100, REE = 270 kΩ,RC =47 kΩ, VA=∞, and βF =100? (b) What are the differential-mode gain, common-mode gain, CMRR, and differential-mode and common-modeinput and output resistances? (c) Repeat part (b) for VA = 50 V.arrow_forward
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