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Design a pnp version of the basic three-transistor current source circuit,using a resistor to establish
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Microelectronics: Circuit Analysis and Design
- Given: R1 = 100 kΩR2 = 56 kΩRC = 2 kΩVCC = +8 V Ib = 20.4µA Ic = 2.04 mA Vce = 3.88V Assume the transistor has β = 100 and VBE(on) = 0.7 V. You may neglect Earlyeffect and use VT = 26 mV. Draw the AC equivalent circuit using re model. Based on this, determinethe parameters Av, Rin and Rout.arrow_forwardWhat will be the input impedance value (Z) of the system since B = 200, Vcc = 20 V, R = 47 kO, R2 = 6.8 kO, Rc = 4.7 kQ, RE = 3 kO in the circuit shown in the figure? NOTE: The output impedance ro of the transistor will be neglected.arrow_forwardAn npn transistor with IS = 1 × 10−16 μA, αF =0.975, and αR = 0.5 is operating with VB E = 0.70 Vand VBC = 0.50 V. By definition, this transistor isoperating in the saturation region. However, in thediscussion it was noted that this transistor actually behaves as if it is still in the forwardactive region even though VBC > 0. Why? Use thetransport model equations to justify your answerarrow_forward
- For a common-emitter amplifier, RC = 1 kΩ, RE = 382 Ω, r'e = 18 Ω, and βac = 75. Assuming that there is no bypass capacitor at RE , the voltage gain is Select one: a. 55.5 b. 45.5 c. 12.5 d. 2.5arrow_forwardA- Calculate the common-mode output voltage and A, voltage gain for the circuit below, where V; = 5mV, Ry = 50K, Rg = 45K0, 1y = ryy = rp = 20K0 and B=p=p,=175.arrow_forwardOne NPN transistor is used in the self biasing arrangement. The circuit components values are Vcc = 4.5V, Rc = 1.5K, RE = 0.27 KO, R2 = 2.7 KQ and R1 = 27K. If B=44. a. Find the stability factor b. Determine the Quiescent point Q (VCE, IC)arrow_forward
- Answer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).arrow_forwardDESIGN PROJECT Single-Stage Common Emitter Class A AmplifierVoltage Divider Bias Circuit Supply: 10 Vdc to 24 VdcLoad: 1 kΩVoltage Gain: 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50 mVp−pTransistor: Si, β = 75;Base-Collector capacitance= 8 pF; Base-Emitter Capacitance= 25 pFarrow_forwardPlease analyze the circuit and determine the voltage gain of both (Av,dc = Vc/Vb for DC analysis) and (Av,ac = Vo/Vs for AC analysis) where RB = 450K, Rs = 80, Ci = 47 uF, RC = 3.3K, Co = 4.7 uF, RL = 100K. In addition, find the output equivalent resistance from the Vo terminal (in AC) and the input equivalent resistance from the Vs terminal (in AC). Hint: the transistor is a Si-based one. You have to write all the calculation details and verbal explanations. You can calculate hie = beta * 26mV / Ie (mA, dc) and use the hoe as an open circuit.arrow_forward
- Since Vcc = 12 V, Vin = 690 mV, RB = 780 kΩ, RC1 = 27.9 Ω, RC2 = 25.4 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure Find the current (IL) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: Output impedances of transistors (r0) will be neglected. a. 16,56 mA b. 23,46 mA c. 8,28 mA d. 17,94 mA e. 20,70 mA f. 13,80 mA g. 26,22 mA h. 11,04 mAarrow_forwardFor the circuit given below, let VBEQ=0.7 V, then the Q-point(VCEQ,ICEQ) equals:arrow_forwardPlease answer immediately and correctly. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find kp and kn.arrow_forward
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