Fundamentals of Physics, Volume 1, Chapter 1-20
Fundamentals of Physics, Volume 1, Chapter 1-20
10th Edition
ISBN: 9781118233764
Author: David Halliday
Publisher: WILEY
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Chapter 41, Problem 11Q
To determine

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Regarding energy gap Eg of Si and Ge:

(a) Both substances have the same number density of charge carriers at room temperature.

(b) At room temperature, germanium has a greater number density of charge carriers than silicon.

(c) Both substances have a greater number density of conduction electrons than holes.

(d) For each substance, the number density of electrons equals that of holes.

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The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
. Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close to
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