Fundamentals of Physics, Volume 1, Chapter 1-20
10th Edition
ISBN: 9781118233764
Author: David Halliday
Publisher: WILEY
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Chapter 41, Problem 46P
To determine
To calculate:
dρ/dT at room temperature for
(a) copper
(b) silicon
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Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T = 300 K:
N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The donor concentration?
Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T = 300 K:
N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The electron concentration ?
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T= 300 K:
N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The acceptor concentration?
Chapter 41 Solutions
Fundamentals of Physics, Volume 1, Chapter 1-20
Ch. 41 - Prob. 1QCh. 41 - Prob. 2QCh. 41 - Prob. 3QCh. 41 - Prob. 4QCh. 41 - Prob. 5QCh. 41 - Prob. 6QCh. 41 - Prob. 7QCh. 41 - Prob. 8QCh. 41 - Prob. 9QCh. 41 - Prob. 10Q
Ch. 41 - Prob. 11QCh. 41 - Prob. 1PCh. 41 - Prob. 2PCh. 41 - Prob. 3PCh. 41 - Prob. 4PCh. 41 - Prob. 5PCh. 41 - Prob. 6PCh. 41 - Prob. 7PCh. 41 - Prob. 8PCh. 41 - Prob. 9PCh. 41 - Prob. 10PCh. 41 - Prob. 11PCh. 41 - Prob. 12PCh. 41 - Prob. 13PCh. 41 - Prob. 14PCh. 41 - Prob. 15PCh. 41 - Prob. 16PCh. 41 - Prob. 17PCh. 41 - Prob. 18PCh. 41 - Prob. 19PCh. 41 - Prob. 20PCh. 41 - Prob. 21PCh. 41 - Prob. 22PCh. 41 - Prob. 23PCh. 41 - Prob. 24PCh. 41 - Prob. 25PCh. 41 - Prob. 26PCh. 41 - Prob. 27PCh. 41 - Prob. 28PCh. 41 - Prob. 29PCh. 41 - Prob. 30PCh. 41 - Prob. 31PCh. 41 - Prob. 32PCh. 41 - Prob. 33PCh. 41 - Prob. 34PCh. 41 - Prob. 35PCh. 41 - Prob. 36PCh. 41 - Prob. 37PCh. 41 - Prob. 38PCh. 41 - Prob. 39PCh. 41 - Prob. 40PCh. 41 - Prob. 41PCh. 41 - Prob. 42PCh. 41 - Prob. 43PCh. 41 - Prob. 44PCh. 41 - Prob. 45PCh. 41 - Prob. 46PCh. 41 - Prob. 47PCh. 41 - Prob. 48PCh. 41 - Prob. 49PCh. 41 - Prob. 50PCh. 41 - Prob. 51PCh. 41 - Prob. 52PCh. 41 - Prob. 53P
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Similar questions
- Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardA sample of N-type silicon is at the room temperature. When an electric fi eld with strength of 1000 Vlcm is applied to the sample. the hole velocity is measured and found to be 2 x 105 cm/sec.arrow_forwardThe intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.arrow_forward
- Silicon is doped with 3×1018 arsenic atoms/cm3 and 8 × 1018 boron atoms/cm3. (a) Is this n- or p-type silicon? (b) What are the hole and electron concentrations at room temperature?arrow_forwardAn atom’s nucleus is a collection of fermions— protons and neutrons. (a) In calculating the Fermi energy in a nucleus, the protons and neutrons must be considered separately. Why? (b) Find the Fermi energy of (i) the protons and (ii) the neutrons in a uranium nucleus, which has a radius of 7.4 x 10-15 m and contains 92 protons and 146 neutrons.arrow_forwardWhat mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.arrow_forward
- Silicon has a conductivity of 5×10-4 (Q.m)-1 when pure. How many arsenic atoms/m3 are required so that the conductivity of 200 (Q .m)-1. The mobility of electrons is O.13 (m2/V. Sec), mobility of holes is 0.05(m2/V.Sec) O 2.4038*10^16 /m-3 O 9.6153*10^21/m-3 O 4*10^5 /m-3 O 9.4089*10^5 /m-3 O other:arrow_forward48 Show that P(E), the occupancy probability in Eq. 41-6, is sym- metrical about the value of the Fermi energy; that is, show that P(EF + AE) + P(EF - AE) = 1.arrow_forwardCompute for the "thermal effective mass" mtherm of the Lithium metal given y(exp) and yo(free electron) where Metal Li mỗ mtherm = Yo y (exp) and mỗ = m (effective mass of electron) y (exp), mJ mol-¹K-2 1.63 Yo (free electron), mJmol-¹K-² 0.75arrow_forward
- In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.arrow_forwardQ3/ An experiment was conducted to find the relationship between the specific heat of potassium metal and the temperature, and it was found that this relationship takes the following formula at low temperatures 2.08 +2.57 T2 What is the value of each of: (1) the fermi temperature of potassium? (b) Debye temperature of potassium? Note that specific heat is measured in units of mj / mol / K.arrow_forwardX. Determine the resistivity of a germanium crystal at 300 K that has the simultaneous presence of (i) donor impurity of 1 in 10' and (ii) acceptor impurity of 1 in 10%. Given data: Atomic concentration in Germanium is 4.4 x 1022 atoms/cm³, n₁ = 2.5 × 10¹3 /cm³, He = 3800 cm² /Vs and h= 180 cm² /V s.arrow_forward
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