Physics for Scientists and Engineers with Modern, Revised Hybrid (with Enhanced WebAssign Printed Access Card for Physics, Multi-Term Courses)
9th Edition
ISBN: 9781305266292
Author: Raymond A. Serway, John W. Jewett
Publisher: Cengage Learning
expand_more
expand_more
format_list_bulleted
Question
Chapter 43, Problem 5OQ
To determine
The property of semiconductor that makes its conductivity increase with increasing temperature.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid.
(a) At what temperature must the boron-doping process be operated? It is known
that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by
Where Do=0.019 cm2/s and Qo=2.74 x 105…
An n-type semiconductor material, which contains
the 1016 electrons/cm³ and the charge carrier
mobility is 1100 cm²/Vs.
(i) Determine
resistivity of the n-type semiconductor
material.
the conductivity and the
(ii) Determine the diffusion coefficient at room
temperature.
(iii) Evaluate the Einstein relation for the
majority charge carrier in n-type material.
In a bipolar junction transistor:
A) all the three regions (the emitter, the base and the collector) have equal concentrations of impurity
B) the emitter has the least concentration of impurity
C) the collector has the least concentration of impurity
D) the base has the least concentration of impurity
Chapter 43 Solutions
Physics for Scientists and Engineers with Modern, Revised Hybrid (with Enhanced WebAssign Printed Access Card for Physics, Multi-Term Courses)
Ch. 43.1 - For each of the following atoms or molecules,...Ch. 43.2 - Prob. 43.2QQCh. 43.2 - Prob. 43.3QQCh. 43 - Prob. 1OQCh. 43 - Prob. 2OQCh. 43 - Prob. 3OQCh. 43 - Prob. 4OQCh. 43 - Prob. 5OQCh. 43 - Prob. 6OQCh. 43 - Prob. 7OQ
Ch. 43 - Prob. 1CQCh. 43 - Prob. 2CQCh. 43 - Prob. 3CQCh. 43 - Prob. 4CQCh. 43 - Prob. 5CQCh. 43 - Prob. 6CQCh. 43 - Prob. 7CQCh. 43 - Prob. 8CQCh. 43 - Discuss models for the different types of bonds...Ch. 43 - Prob. 10CQCh. 43 - Prob. 1PCh. 43 - Prob. 2PCh. 43 - Prob. 3PCh. 43 - Prob. 4PCh. 43 - Prob. 5PCh. 43 - Prob. 6PCh. 43 - Prob. 7PCh. 43 - Prob. 8PCh. 43 - Prob. 9PCh. 43 - Prob. 10PCh. 43 - Prob. 12PCh. 43 - Prob. 13PCh. 43 - Prob. 14PCh. 43 - Prob. 15PCh. 43 - Prob. 16PCh. 43 - The nuclei of the O2 molecule are separated by a...Ch. 43 - Prob. 18PCh. 43 - Prob. 19PCh. 43 - Prob. 20PCh. 43 - Prob. 21PCh. 43 - Prob. 22PCh. 43 - Prob. 23PCh. 43 - Prob. 24PCh. 43 - Prob. 25PCh. 43 - Prob. 27PCh. 43 - Prob. 28PCh. 43 - Prob. 29PCh. 43 - Prob. 30PCh. 43 - Prob. 31PCh. 43 - Prob. 32PCh. 43 - Prob. 33PCh. 43 - Prob. 34PCh. 43 - Prob. 35PCh. 43 - Prob. 36PCh. 43 - Prob. 37PCh. 43 - Prob. 38PCh. 43 - Prob. 39PCh. 43 - Prob. 40PCh. 43 - Prob. 41PCh. 43 - Prob. 42PCh. 43 - Prob. 43PCh. 43 - Prob. 44PCh. 43 - Prob. 45PCh. 43 - Prob. 46PCh. 43 - Prob. 47PCh. 43 - Prob. 49PCh. 43 - Prob. 50PCh. 43 - Prob. 51PCh. 43 - A direct and relatively simple demonstration of...Ch. 43 - Prob. 53PCh. 43 - Prob. 54APCh. 43 - Prob. 55APCh. 43 - Prob. 56APCh. 43 - Prob. 57APCh. 43 - Prob. 58APCh. 43 - Prob. 59APCh. 43 - Prob. 61APCh. 43 - Prob. 62APCh. 43 - Prob. 63CPCh. 43 - As an alternative to Equation 43.1, another useful...
Knowledge Booster
Similar questions
- The measured density of a NaF crystal is 2.558 g/cm3 . What is the equilibrium separate distance of Na+ and Flions?arrow_forwardAt what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at T = 0 K?arrow_forwardA Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?arrow_forward
- A high electron mobility transistor (HEMT) controls large currents by applying a small voltage to a thin sheet of electrons. The density and mobility of the electrons in the sheet are critical for the operation of the HEMT. HEMTS consisting of AlGaN/GaN/Si are being studied because they promise better performance at higher powers, temperatures, and frequencies than conventional silicon HEMTS can achieve. In one study, the Hall effect was used to measure the density of electrons in one of these new HEMTs. When a current of 12.1 ?A flows through the length of the electron sheet, which is 1.12 mm long, 0.223 mm wide, and 15.1 nm thick, a magnetic field of 1.05 T perpendicular to the sheet produces a voltage of 0.511 mV across the width of the sheet. What is the density of electrons per m3 in the sheet?arrow_forward1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.arrow_forwardQuestion 2: а. Find the conductivity of an intrinsic semiconductor which have the following values: µe = (0 + 0.25) m²/V.s; µp = (0+ 0.035) m²/V.s; n¡ = (0 + 1.55) × 10*m³.arrow_forward
- A ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As atoms in this crystal will be: O 3.641e24 /cm^3 2.048e30 /cm^3 O 1.821e24 /cm^3 O 3.550e16 /cm^3 O 1.593e24 /cm^3arrow_forwardWhat difficulties can designers and manufacturers have when working with semiconductors containing billions of transistors on a single die?arrow_forwardThe peak of the spectral intensity in the emission spectrum of the sun is between 0.4 and 0.8 um wavelength You are using two different semiconductors one with a band gap of 1.24 eV and the other with a band gap of 2.07 eV as photo-absorbers for solar cell application. With the information given, please comment briefly on the likely losses in efficiency they will suffer each.arrow_forward
- In an unbiased p-n junction, holes diffuse from the p-region to n-region because(a) free electrons in the n-region attract them.(b) they move across the junction by the potential difference.(c) hole concentration in p-region is more as compared to n-region.(d) All the abovearrow_forwardProblem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…arrow_forwardQ#07: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 micrometer (a) what is he energy gap (in eV) between the valence and conduction bands for this photocell (b) Explain why pure silicon is opaque.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax