The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K , the reference mobility 1300 cm 2 ( Vs ) − 1 , with charge of 1.6 × 10 − 19 C and the intrinsic carrier density is 6 × 10 6 V s cm / C using the bisection method.

Question

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Answer 1

Question

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

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Answer 2

Question

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

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Answer 3

Question

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

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Answer 4

Question

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

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Answer 5

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

Answer 6

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

Answer 7

Chapter 8, Problem 31P

(a)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

Answer 8

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

Answer 9

(b)

To determine

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

Answer 10

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Answer 11

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Answer 12

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Answer 13

Ch. 8 - 8.1 Perform the same computation as in Sec. 8.1,...Ch. 8 - 8.2 In chemical engineering, plug flow reactors...Ch. 8 - 8.3 In a chemical engineering process, water vapor...Ch. 8 - The following equation pertains to the...Ch. 8 - 8.5 A reversible chemical reaction Can be...Ch. 8 - The following chemical reactions take place in a...Ch. 8 - The Redlich-Kwong equation of state is given by...Ch. 8 - The volume V of liquid in a hollow horizontal...Ch. 8 - The volume V of liquid in a spherical tank of...Ch. 8 - 8.10 For the spherical tank in Prob. 8.9, it is...

The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K , the reference mobility 1300 cm 2 ( Vs ) − 1 , with charge of 1.6 × 10 − 19 C and the intrinsic carrier density is 6 × 10 6 V s cm / C using the bisection method.

Solution Summary: The author calculates the value of the doping density N using the bisection method.

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the bisection method.

To calculate: The value of the doping density N so that resistivity of doped silicon at 1000 K with reference temperature 300 K, the reference mobility 1300 cm2(Vs)−1, with charge of 1.6×10−19 C and the intrinsic carrier density is 6×106 V s cm/C using the modified secant method.

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Chapter 8 Solutions