1) Phosphorus is diffused into P-Si with doping of 107 cm at T=1000 C for 1 hour by solid solubility limited process. Calculate C(0), junction depth, and total impurities diffused into the silicon.
1) Phosphorus is diffused into P-Si with doping of 107 cm at T=1000 C for 1 hour by solid solubility limited process. Calculate C(0), junction depth, and total impurities diffused into the silicon.
Chapter32: Gas Chromatography
Section: Chapter Questions
Problem 32.15QAP
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