Essential University Physics
4th Edition
ISBN: 9780134988566
Author: Wolfson, Richard
Publisher: Pearson Education,
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Question
Chapter 37, Problem 52P
To determine
The band gap of
Si
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the carrier distribution in the conduction band is:nc(E) = gc(E) . f(E)
a) For a non-degenerate semiconductor, show that nc(E) has a maximum at E = Ec + ½ kT
b) What is the ratio of carrier distribution at E = Ec + kT to that of the max value ?
Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meV
The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
Chapter 37 Solutions
Essential University Physics
Ch. 37.1 - Prob. 37.1GICh. 37.2 - If a scientist uses microwave technology to study...Ch. 37.3 - Prob. 37.3GICh. 37 - Prob. 1FTDCh. 37 - Prob. 2FTDCh. 37 - Prob. 3FTDCh. 37 - Prob. 4FTDCh. 37 - Prob. 5FTDCh. 37 - Prob. 6FTDCh. 37 - Prob. 7FTD
Ch. 37 - Prob. 8FTDCh. 37 - Prob. 9FTDCh. 37 - Prob. 10FTDCh. 37 - Prob. 11ECh. 37 - Prob. 12ECh. 37 - Prob. 13ECh. 37 - Prob. 14ECh. 37 - Prob. 15ECh. 37 - Prob. 16ECh. 37 - Prob. 17ECh. 37 - Prob. 18ECh. 37 - Prob. 19ECh. 37 - Prob. 20ECh. 37 - Prob. 21ECh. 37 - Prob. 22ECh. 37 - Prob. 23ECh. 37 - Prob. 24ECh. 37 - Prob. 25ECh. 37 - Prob. 26ECh. 37 - Prob. 27ECh. 37 - Prob. 28ECh. 37 - Prob. 29ECh. 37 - Prob. 30ECh. 37 - Prob. 31PCh. 37 - Prob. 32PCh. 37 - Prob. 33PCh. 37 - Prob. 34PCh. 37 - Prob. 35PCh. 37 - Prob. 36PCh. 37 - Prob. 37PCh. 37 - Prob. 39PCh. 37 - Prob. 40PCh. 37 - Prob. 41PCh. 37 - Prob. 42PCh. 37 - Prob. 43PCh. 37 - Prob. 44PCh. 37 - Prob. 45PCh. 37 - Prob. 46PCh. 37 - Prob. 47PCh. 37 - Prob. 48PCh. 37 - Prob. 49PCh. 37 - Prob. 50PCh. 37 - Prob. 51PCh. 37 - Prob. 52PCh. 37 - Prob. 53PCh. 37 - Prob. 54PCh. 37 - The critical field in a niobium-titanium...Ch. 37 - The transition from the ground state to the first...Ch. 37 - Prob. 57PCh. 37 - Prob. 58PCh. 37 - Youre troubled that Example 37.1 neglects the mass...Ch. 37 - Prob. 60PCh. 37 - The Madelung constant (Section 37.3) is...Ch. 37 - Prob. 62PCh. 37 - (a) Count the number of electron states N(E) with...Ch. 37 - Prob. 64PCh. 37 - Prob. 65PCh. 37 - Prob. 66PCh. 37 - Prob. 67PPCh. 37 - Prob. 68PPCh. 37 - Prob. 69PPCh. 37 - Prob. 70PP
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- As the doping density of a semiconductor increases, the :mobility generally Stays the same Increases Decreases First increases, then decreases First decreases, then increasesarrow_forwardCsSnI3, a perovskite semiconductor, has a band gap of 1.3 eV. What area of the electromagnetic spectrum will it absorb in? A. Infra-red only B. Ultra-violet and blue only C. Red only D. Various colours across the visible spectrum, plus infra red.arrow_forwardIn an N-type semiconductor at T = 300 K, the electron concentration varies linearly from 2 x 10^18 to 5 X 10^17 per cc over a distance of 1.5 mm and the diffusion current density is 360 A/cm^2. Find the mobility of electrons.arrow_forward
- For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.arrow_forwardThe Fermi energy of a doped semiconductor is different from that of a pure semiconductor. Consider silicon, where the energy difference between the top of the valence band and the bottom of the conduction band is 1.11 eV. At a temperature of 300 K the Fermi energy of pure silicon lies approximately between the bottom of the conduction band and the top of the valence band. (a) Calculate the probability of occupying a state at the bottom of the conduction band. Consider now that the silicon has been doped with donor atoms that introduce a state at 0.15 eV below the conduction band background. Doping also caused the Fermi level to be shifted to an energy 0.11 eV below the bottom of the conduction band. (b) Under these conditions, calculate the occupancy of the lower end of the conduction band. (c) Calculate the probability that the level introduced by the donor impurities is occupied.arrow_forwardThe occupancy probability at a certain energy E1 in the valence band of a metal is 0.60 when the temperature is 300 K. Is E1 above or below the Fermi energy?arrow_forward
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