Physics for Scientists and Engineers, Vol. 1
6th Edition
ISBN: 9781429201322
Author: Paul A. Tipler, Gene Mosca
Publisher: Macmillan Higher Education
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Chapter 38, Problem 2P
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The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
(e) Intrinsic silicon has effective densities of states in the conduction band and the
valence band of 3.2 × 10¹⁹ cm−³ and 1.8 × 10¹⁹ cm-³, respectively. If the band gap
is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K?
A.
9.46 x 10⁹ m-³
9.46 x 10⁹ cm-³
0 m-3
2.40 x 1019 cm-3
B.
C.
D.
Iron has an atomic number Z-26, relative atomic mass of A=52 and a mass density of 7800 kg m-3, Estimate the number of conduction band electrons per m 3 in
iron, assuming that each atom contributes two electrons to the conduction band. Recall that m e-9.1*10-31 kg, m p=1.67*10-27 kg, e=1.6*10-19 C, N A-6.022*10 23
mol-1
O 17.202 1028
17.482-1028
17.964*1028
O
O 36.158 1028
O 58.725 1028
Chapter 38 Solutions
Physics for Scientists and Engineers, Vol. 1
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
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