Physics for Scientists and Engineers, Vol. 1
6th Edition
ISBN: 9781429201322
Author: Paul A. Tipler, Gene Mosca
Publisher: Macmillan Higher Education
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Chapter 38, Problem 67P
To determine
The probability that a given
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In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function
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O 1.935 V/cm
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O 5805 V/cm
O 55.56 V/cm
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Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium
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arsenic to create holes. Use the following parameters for GaAs at T=300 K:
N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
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The hole concentration?
Chapter 38 Solutions
Physics for Scientists and Engineers, Vol. 1
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
Ch. 38 - Prob. 11PCh. 38 - Prob. 12PCh. 38 - Prob. 13PCh. 38 - Prob. 14PCh. 38 - Prob. 15PCh. 38 - Prob. 16PCh. 38 - Prob. 17PCh. 38 - Prob. 18PCh. 38 - Prob. 19PCh. 38 - Prob. 20PCh. 38 - Prob. 21PCh. 38 - Prob. 22PCh. 38 - Prob. 23PCh. 38 - Prob. 24PCh. 38 - Prob. 25PCh. 38 - Prob. 26PCh. 38 - Prob. 27PCh. 38 - Prob. 28PCh. 38 - Prob. 29PCh. 38 - Prob. 30PCh. 38 - Prob. 31PCh. 38 - Prob. 32PCh. 38 - Prob. 33PCh. 38 - Prob. 34PCh. 38 - Prob. 35PCh. 38 - Prob. 36PCh. 38 - Prob. 37PCh. 38 - Prob. 38PCh. 38 - Prob. 39PCh. 38 - Prob. 40PCh. 38 - Prob. 41PCh. 38 - Prob. 42PCh. 38 - Prob. 43PCh. 38 - Prob. 44PCh. 38 - Prob. 45PCh. 38 - Prob. 46PCh. 38 - Prob. 47PCh. 38 - Prob. 48PCh. 38 - Prob. 49PCh. 38 - Prob. 50PCh. 38 - Prob. 51PCh. 38 - Prob. 52PCh. 38 - Prob. 53PCh. 38 - Prob. 54PCh. 38 - Prob. 55PCh. 38 - Prob. 56PCh. 38 - Prob. 57PCh. 38 - Prob. 58PCh. 38 - Prob. 59PCh. 38 - Prob. 60PCh. 38 - Prob. 61PCh. 38 - Prob. 62PCh. 38 - Prob. 63PCh. 38 - Prob. 64PCh. 38 - Prob. 65PCh. 38 - Prob. 66PCh. 38 - Prob. 67PCh. 38 - Prob. 68PCh. 38 - Prob. 69PCh. 38 - Prob. 70PCh. 38 - Prob. 71PCh. 38 - Prob. 72PCh. 38 - Prob. 73PCh. 38 - Prob. 74PCh. 38 - Prob. 75PCh. 38 - Prob. 76P
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- Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forward
- The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a gamma-ray photon with wavelength 9.31 * 10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray?arrow_forwardGraph below shows the electron occupancy probability P(E) as a function of energy for Bismuth (mBi = 3.47 × 10-25 kg) at the temperature T = 0 K. What is the number of conduction electrons per unit volume for Bismuth? 1 1 2 3 4 5 6 7 8 E (ev) P(E)arrow_forwardK: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV) and gallium arsenide (Eg = 1.42 eV) at 400 K.arrow_forward
- What fraction of the electrons in a good conductor have energies between 0.90 EF and EF at T = 0?arrow_forwardSilver contains 5.8 * 1028 free electrons per cubic meter. At absolute zero, what is the Fermi energy (in J and eV) of silver?arrow_forwardThe Fermi energy of silver is µF = 5.51 eV. a) Calculate µ(7) of Ag at T = 400 and 4000 K. b) What is the rms speed of electrons at 0 K? What is the Fermi velocity? c) Plot the Fermi function at 0 and 4000 K in one graph and discuss the differences.arrow_forward
- Silicon has a conductivity of 5×10-4 (Q.m)-1 when pure. How many arsenic atoms/m3 are required so that the conductivity of 200 (Q .m)-1. The mobility of electrons is O.13 (m2/V. Sec), mobility of holes is 0.05(m2/V.Sec) O 2.4038*10^16 /m-3 O 9.6153*10^21/m-3 O 4*10^5 /m-3 O 9.4089*10^5 /m-3 O other:arrow_forwardX. Determine the resistivity of a germanium crystal at 300 K that has the simultaneous presence of (i) donor impurity of 1 in 10' and (ii) acceptor impurity of 1 in 10%. Given data: Atomic concentration in Germanium is 4.4 x 1022 atoms/cm³, n₁ = 2.5 × 10¹3 /cm³, He = 3800 cm² /Vs and h= 180 cm² /V s.arrow_forwardThe intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.arrow_forward
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