Physics for Scientists and Engineers, Vol. 1
6th Edition
ISBN: 9781429201322
Author: Paul A. Tipler, Gene Mosca
Publisher: Macmillan Higher Education
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Chapter 38, Problem 16P
To determine
The center-to-center separation distance between
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In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T=300 K:
N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The hole concentration?
Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T = 300 K:
N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The electron concentration ?
Chapter 38 Solutions
Physics for Scientists and Engineers, Vol. 1
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
Ch. 38 - Prob. 11PCh. 38 - Prob. 12PCh. 38 - Prob. 13PCh. 38 - Prob. 14PCh. 38 - Prob. 15PCh. 38 - Prob. 16PCh. 38 - Prob. 17PCh. 38 - Prob. 18PCh. 38 - Prob. 19PCh. 38 - Prob. 20PCh. 38 - Prob. 21PCh. 38 - Prob. 22PCh. 38 - Prob. 23PCh. 38 - Prob. 24PCh. 38 - Prob. 25PCh. 38 - Prob. 26PCh. 38 - Prob. 27PCh. 38 - Prob. 28PCh. 38 - Prob. 29PCh. 38 - Prob. 30PCh. 38 - Prob. 31PCh. 38 - Prob. 32PCh. 38 - Prob. 33PCh. 38 - Prob. 34PCh. 38 - Prob. 35PCh. 38 - Prob. 36PCh. 38 - Prob. 37PCh. 38 - Prob. 38PCh. 38 - Prob. 39PCh. 38 - Prob. 40PCh. 38 - Prob. 41PCh. 38 - Prob. 42PCh. 38 - Prob. 43PCh. 38 - Prob. 44PCh. 38 - Prob. 45PCh. 38 - Prob. 46PCh. 38 - Prob. 47PCh. 38 - Prob. 48PCh. 38 - Prob. 49PCh. 38 - Prob. 50PCh. 38 - Prob. 51PCh. 38 - Prob. 52PCh. 38 - Prob. 53PCh. 38 - Prob. 54PCh. 38 - Prob. 55PCh. 38 - Prob. 56PCh. 38 - Prob. 57PCh. 38 - Prob. 58PCh. 38 - Prob. 59PCh. 38 - Prob. 60PCh. 38 - Prob. 61PCh. 38 - Prob. 62PCh. 38 - Prob. 63PCh. 38 - Prob. 64PCh. 38 - Prob. 65PCh. 38 - Prob. 66PCh. 38 - Prob. 67PCh. 38 - Prob. 68PCh. 38 - Prob. 69PCh. 38 - Prob. 70PCh. 38 - Prob. 71PCh. 38 - Prob. 72PCh. 38 - Prob. 73PCh. 38 - Prob. 74PCh. 38 - Prob. 75PCh. 38 - Prob. 76P
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- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forward
- At 23° K, the crystal structure transforms from BCC to HCP keeping density same. The cubic face in BCC is a 3.42 A and in HCP is-1.53. The lattice constant in HCP structure is, (n) 2.64 A (b) 3.16 A () 2.16 A (4) 2.42 Aarrow_forwardQ1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.arrow_forwardHcp structure . Show that the c/a ratio for an ideal hexagonal close- packed structure is (8/3)^1/2 = 1.633 . if c/a is significantly larger than this value , the crystal structure may be thought of as composed of planes of closely packed atoms, the planes being loosely stacked.arrow_forward
- At 23° K, the crystal structure transforms from BCC to HCP keeping density same. The cubic face in BCC is a= 3.42 A and in HCP is = 1.53. The lattice constant in HCP structure is, (а) 2.64 A (b) 3.16 А (c) 2.16 A (d) 2.42 Aarrow_forwardA sample of copper has a mass of 10.68 g when measured in air. It has a mass of 9.47 g when measured in water. Answer these three questions: How many atoms are in the sample? What is the simple volume of the space including and surrounding each atom? Assume the atoms are evenly distributed throughout the sample. That is no FCC, BCC, or HCP crystal structure. What is the diameter of each atom?arrow_forward5. a) Consider a GaAs pn junction, in thermal equilibrium at 300 K, under zero-bias and with dopant concentrations of Na = 1 x 1017 cm³ on the p-side of the junction and Nd = 5 x 1015 cm3 on the n-side. ɛr = 13.1 for GaAs. The cross-sectional area of the junction is 1 x 102 cm?. Determine the following junction characteristics; state your answers in this form and show all work on a separate page. Vbi = V Xp = m Energy barrier AE = eV W = Xn = |{max| = N/C m Qn = Qp = C b) Consider the GaAs pn junction as described above under a reverse-bias of 2 V. Determine the following junction characteristics; state your answers in this form and show work on a separate page. Energy barrier AE = eV W =arrow_forward
- B/ A new semiconductor material is to be n-type and doped with 6x10¹ cm³ donor atoms. Assume complete ionization and assume N,= 0. The effective density of states functions are N, =1.&r 10¹ cm and N,= 1.2x10 cm³ at 7-300 K. A special semiconductor device fabricated with this material requires that the electron concentration be no greater than 6.08x10¹ cm³ at 7= 400 K. What is the minimum band gap energy required in this new material?arrow_forwardThe conductivity of a metal is 5.6 x 105 Ohm-¹cm¹ and the density is 8.92 g/cm³ with an atomic mass 62.5 g/mol. Determine the following: i) drift mobility and ii) mean time between the scatterings.arrow_forwardThe atomic radius of gold (Au) is 0.146 nm and its atomic mass is 197 gmol-1. Assuming the atoms to be hard spheres that touch each other along the face diagonals of the unit cell, calculate the density of its unit cell. Given Avogadro's number, NA = 6.023 X 1023 atoms mol-1.arrow_forward
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