Physics for Scientists and Engineers, Vol. 1
Physics for Scientists and Engineers, Vol. 1
6th Edition
ISBN: 9781429201322
Author: Paul A. Tipler, Gene Mosca
Publisher: Macmillan Higher Education
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Chapter 38, Problem 53P

(a)

To determine

The graph showing the valence and conduction band edges and fermi energy of a pn -junction diode when biased in the forward direction.

(b)

To determine

The graph showing the valence and conduction band edges and Fermi energy of a pn -junction diode when biased in the reverse direction.

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Students have asked these similar questions
In a p-n junction diode, the current I can be expressed as eV 1= 1, exp ( 2k„T where I, is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, køis the Boltzmann constant (8.6x10- eV/K) and T is the absolute temperature. If for a given diode I, = 5 x 10-12 A and T = 300 K, then (a) What will be the forward current at a forward voltage of 0.6 V?
1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
Q/ A Germanium p-n junction diode has a reverse saturation current of 3.97 x 10-19A at room temperature. The diode is forward-biased with a voltage source of 1 V. Calculate the dynamic resistance of the Ge diode at room temperature.
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