Physics for Scientists and Engineers, Vol. 1
6th Edition
ISBN: 9781429201322
Author: Paul A. Tipler, Gene Mosca
Publisher: Macmillan Higher Education
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Chapter 38, Problem 12P
(a)
To determine
The elements used to dope silicon to create a
(b)
To determine
The elements used to dope silicon to create a
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1.0 Biased PN Junctions
Consider two PN diodes, A and B as depicted below. Suppose the junction area for
each diode is 1.0 x10-8 cm² (1 square-micron)
P-doped
N-doped
N = 1016 1/ cm3
Ng = 1017 1/cm³
X,
*po
Vo
в
P-doped
Na = 1018 1/cm3
N-doped
Ng = 1017 1/cm3
Х ро
Xno
V.
a) At VD =0 Volts, which diode has the wider total depletion region width (value
(in microns) and what is it?
b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in
the depletion region is the largest and what is its value (in V/cm)?
c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a
smaller magnitude of the negative bias).
In a p-type semiconductor with a defect-rich surface the surface recombination velocity is 104 cm/s. (i) draw a schematic figure illustrating how the surface recombination flux changes with input light intensity; (ii) How does the surface recombination flux change with doping level?
The figure below shows a portion of the energy band diagram of a p-n semiconductor junction. According to the situation shown in the figure, in the equilibrium condition, we can identify the currents as follows:(a) i1:electron diffusion current, i2:electron drift current, i3:hole diffusion current and i4:hole drift current. (b) i1:hole drift current, i2:electron drift current, i3:hole diffusion current and i4:electron diffusion current. (c) i1:hole diffusion current, i2:electron drift current, i3:hole drift current and i4:electron diffusion current. (d) i1:electron diffusion current, i2:electron diffusion current, i3:hole drift current and i4:hole drift current. (e) i1:hole drift current, i2:electron diffusion current, i3:hole diffusion current and i4:electron drift current.
Chapter 38 Solutions
Physics for Scientists and Engineers, Vol. 1
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
Ch. 38 - Prob. 11PCh. 38 - Prob. 12PCh. 38 - Prob. 13PCh. 38 - Prob. 14PCh. 38 - Prob. 15PCh. 38 - Prob. 16PCh. 38 - Prob. 17PCh. 38 - Prob. 18PCh. 38 - Prob. 19PCh. 38 - Prob. 20PCh. 38 - Prob. 21PCh. 38 - Prob. 22PCh. 38 - Prob. 23PCh. 38 - Prob. 24PCh. 38 - Prob. 25PCh. 38 - Prob. 26PCh. 38 - Prob. 27PCh. 38 - Prob. 28PCh. 38 - Prob. 29PCh. 38 - Prob. 30PCh. 38 - Prob. 31PCh. 38 - Prob. 32PCh. 38 - Prob. 33PCh. 38 - Prob. 34PCh. 38 - Prob. 35PCh. 38 - Prob. 36PCh. 38 - Prob. 37PCh. 38 - Prob. 38PCh. 38 - Prob. 39PCh. 38 - Prob. 40PCh. 38 - Prob. 41PCh. 38 - Prob. 42PCh. 38 - Prob. 43PCh. 38 - Prob. 44PCh. 38 - Prob. 45PCh. 38 - Prob. 46PCh. 38 - Prob. 47PCh. 38 - Prob. 48PCh. 38 - Prob. 49PCh. 38 - Prob. 50PCh. 38 - Prob. 51PCh. 38 - Prob. 52PCh. 38 - Prob. 53PCh. 38 - Prob. 54PCh. 38 - Prob. 55PCh. 38 - Prob. 56PCh. 38 - Prob. 57PCh. 38 - Prob. 58PCh. 38 - Prob. 59PCh. 38 - Prob. 60PCh. 38 - Prob. 61PCh. 38 - Prob. 62PCh. 38 - Prob. 63PCh. 38 - Prob. 64PCh. 38 - Prob. 65PCh. 38 - Prob. 66PCh. 38 - Prob. 67PCh. 38 - Prob. 68PCh. 38 - Prob. 69PCh. 38 - Prob. 70PCh. 38 - Prob. 71PCh. 38 - Prob. 72PCh. 38 - Prob. 73PCh. 38 - Prob. 74PCh. 38 - Prob. 75PCh. 38 - Prob. 76P
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