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The temperature dependence of the diffusion coefficient D (cm2/s) is given by an Arrhenius type equation:
whereD0(cm2/s) is pre-exponential constant, Ea(J/mol) is activation energy for diffusion, R = 8.31 (J/mol-K) is the gas consent, and T is temperature in Kelvin. For diffusion of carbon into stainless steel D0= 6.18 cm2/s, and Ea= 187 KJ/mol. Make two plots of D versus Tfor
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Chapter 5 Solutions
EBK MATLAB: AN INTRODUCTION WITH APPLIC
- 8. Each of the three insulators forming a string has a self capacitance of C farad The shunt capacitance of each insulator is 02C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: )with the guard ring. (7) without guard ring. 10 95% () 86 13%|arrow_forwardA piece of silver wire has a resistance of 1 ohm. Determine the resistance of alead wire one-third the length and one-third the diameter if the resistivity of lead wire is 30 times that of silver. NOTE: Please explain where did you get the variables so I can understand them. Thank youarrow_forward4. Define the continuity equation, then discuss the relaxation time in dielectric and conducting materials. Page 2 of 2arrow_forward
- (1-8) Find the diffusion coefficient of holes and electrons for Germanium at 300 k. The mobilities in cm2/v-s at 300 k for electrons and holes are respectively 3600 and 1700. Density of carriers is 2.5x 1023/m .Boltzmann constant K=1.38 x 1023. carrierarrow_forward4. Use this information to answer Question 4-6: Below is the capacitance-voltage curve measured for a Schottky contact made on n-type GaAs at T = 300 K. In this plot, the capacitance has the unit of F/cm² and voltage is in unit of V. 1/C² x 1015 3.0 → Va -2.0 0.9 What is the built-in potential, oi, in unit of V? Answers within 5% error will be considered correct. Enter answer here 5. Calculate doping densiy in GaAs, Np, in unit of cm 3. Answers within 5% error will be considered correct. Enter answer herearrow_forwardGive realtive relations between and relative parameters for the following: 1.) ohmic resistance 2.) ballistic transport 3.) quantification of conductancearrow_forward
- A copper wire has a diameter of 2.05 mm and carries a current of 15 A due solely toelectrons. (These values are common in residential wiring.) Each electron has a charge of -1.60 x 10-19 C. Assume that the free-electron (these are the electrons capable of movingthrough the copper) concentration in copper is 1029 electrons/m³. Find the average velocity ofthe electrons in the wire.arrow_forwardDraw the schematic diagram showing the energy level alignment of metal-semiconductor and semiconductor-semiconductor junctions after contact under thermal equilibrium for the following cases. Note P = work function % = electron affinity EG = band gap Ec = conduction band Ey = valence band EF = fermi level 1. semiconductor EVAC Metal Os Xs Ec Egs ErM Ey Before contact 2. semiconductor EVAC Metal Xs OM Ec EyM Eps Ey Before contact 3. semiconductor EVAC Metal OM Ec EFM Eps Ev Before contact Electron energy Electron energy Electron energyarrow_forward7. Each of three insulators forming a string has self-capacitance of "C farad. The shunt capacitance of each cap of msulator is 0 25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.arrow_forward
- Q 4. An electric field of 137 V/cm is applied across an n type semiconductor sample and the minority carriers are being injected to the sample at a point. The field moves these carriers a distance of 0.4 cm in 10 us. find the drift velocity and the diffusivity of the minority carriers. A: See answer 100% (1 rating)arrow_forwardDisplacement current is taken to be negligible (compared to the .. conduction current) if ..... ..... (a and c) O O «Wɛ () O >>Wɛ ( O =0 Oarrow_forwardExercises 1. A silicon p-n junction has the hole and electron resistivity are 0.001 .m, 0.004 .m respectively in T-250 °K. The intrinsic carrier density is 6.2×10¹0 m³, the electron and hole diffusion length are 1.8×104 m, 1.1×104 m respectively, and th=8 µs. Find reverse saturation current density. 2. Given a Si diode with the following physical ch/s the doping concentration in the p-type is 2.25×10¹7 cm³ and in the n-type is 2.25×10¹4 cm³, junction area is 2×10³ cm², life time of hole in n-region=10 µs, life time of electron in p-region =50 µs, hole and electron mobilities are 600 cm³V's¹ and 2100 cm²V¹s¹ respectively, the intrinsic carrier concentration is 1.4x100 cm³ and the voltage is 0.66 v operation at room temperature. Calculate Jp(0) and Jn(0) then calculate the total diode current. 3. A silicon p-n junction has energy of C.B. and V.B. are 0.9 eV, 0.1 eV respectively at 200 K. the hole and electron mobility, resistivity are 0.16 m²/V.s, 0.36 m²/V.s, 0.0025 92.m and 0.005 2.m.…arrow_forward
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