Modern Physics
2nd Edition
ISBN: 9780805303087
Author: Randy Harris
Publisher: Addison Wesley
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Chapter 10, Problem 59E
To determine
The fractional change in resistivity
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Since the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.
For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.
the carrier distribution in the conduction band is:nc(E) = gc(E) . f(E)
a) For a non-degenerate semiconductor, show that nc(E) has a maximum at E = Ec + ½ kT
b) What is the ratio of carrier distribution at E = Ec + kT to that of the max value ?
Chapter 10 Solutions
Modern Physics
Ch. 10 - Prob. 1CQCh. 10 - Prob. 2CQCh. 10 - Prob. 3CQCh. 10 - Of N2,O2 , and F2 , none has an electric dipole...Ch. 10 - It takes less energy to dissociate a diatomic...Ch. 10 - Prob. 6CQCh. 10 - Prob. 7CQCh. 10 - Prob. 8CQCh. 10 - Prob. 9CQCh. 10 - Prob. 10CQ
Ch. 10 - Prob. 11CQCh. 10 - In the boron atom, the single 2p electron does not...Ch. 10 - Prob. 13CQCh. 10 - Prob. 14CQCh. 10 - Prob. 15CQCh. 10 - Prob. 16CQCh. 10 - Prob. 17CQCh. 10 - Prob. 18CQCh. 10 - Prob. 19CQCh. 10 - Prob. 20CQCh. 10 - Prob. 21CQCh. 10 - Prob. 22CQCh. 10 - In a buckyball three of the bonds around each...Ch. 10 - Prob. 24CQCh. 10 - Prob. 25ECh. 10 - Prob. 26ECh. 10 - Prob. 27ECh. 10 - Prob. 28ECh. 10 - Prob. 29ECh. 10 - Prob. 30ECh. 10 - Prob. 31ECh. 10 - Prob. 32ECh. 10 - Prob. 33ECh. 10 - Prob. 34ECh. 10 - By expanding an arbitrary U(x) in a power series...Ch. 10 - Prob. 36ECh. 10 - Prob. 37ECh. 10 - Prob. 38ECh. 10 - Prob. 39ECh. 10 - Prob. 40ECh. 10 - Prob. 41ECh. 10 - Prob. 42ECh. 10 - Prob. 43ECh. 10 - As noted in Example 10.2, the HD molecule differs...Ch. 10 - Prob. 45ECh. 10 - Prob. 46ECh. 10 - Prob. 47ECh. 10 - Prob. 48ECh. 10 - Prob. 49ECh. 10 - Prob. 50ECh. 10 - Prob. 51ECh. 10 - Prob. 52ECh. 10 - Prob. 53ECh. 10 - Prob. 54ECh. 10 - Carry out the integration indicated in equation...Ch. 10 - Prob. 56ECh. 10 - Prob. 57ECh. 10 - Prob. 58ECh. 10 - Prob. 59ECh. 10 - Prob. 60ECh. 10 - Prob. 61ECh. 10 - Prob. 62ECh. 10 - Prob. 63ECh. 10 - Prob. 64ECh. 10 - Prob. 65ECh. 10 - Prob. 66ECh. 10 - Prob. 67ECh. 10 - Prob. 68ECh. 10 - Prob. 69ECh. 10 - Prob. 70ECh. 10 - Prob. 71ECh. 10 - Prob. 72ECh. 10 - Prob. 73ECh. 10 - Prob. 74ECh. 10 - The magnetic field at the surface of a long Wire...Ch. 10 - Prob. 76ECh. 10 - Prob. 77CECh. 10 - Prob. 78CECh. 10 - Prob. 79CE
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- For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.arrow_forwardThe energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.arrow_forwardAs the doping density of a semiconductor increases, the :mobility generally Stays the same Increases Decreases First increases, then decreases First decreases, then increasesarrow_forward
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