Modern Physics
2nd Edition
ISBN: 9780805303087
Author: Randy Harris
Publisher: Addison Wesley
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Question
Chapter 10, Problem 56E
(a)
To determine
Whether the disparity follows at least to a rough order or magnitude.
(b)
To determine
The value of the room temperature resistivity of the diamond which has a band gap of about
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Calculate the conductivity of an intrinsic silicon at room temperature. If ten electrons out of 1010 electrons in Valence Band move to Conduction Band. Given the silicon density is (2.33×10 Kg/m³), the silicon atomie weight is (28.086), the electrons mobility is (0.15 m/V.sec.), and the holes mobility is (0.05 m2/V.sec.).
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Chapter 10 Solutions
Modern Physics
Ch. 10 - Prob. 1CQCh. 10 - Prob. 2CQCh. 10 - Prob. 3CQCh. 10 - Of N2,O2 , and F2 , none has an electric dipole...Ch. 10 - It takes less energy to dissociate a diatomic...Ch. 10 - Prob. 6CQCh. 10 - Prob. 7CQCh. 10 - Prob. 8CQCh. 10 - Prob. 9CQCh. 10 - Prob. 10CQ
Ch. 10 - Prob. 11CQCh. 10 - In the boron atom, the single 2p electron does not...Ch. 10 - Prob. 13CQCh. 10 - Prob. 14CQCh. 10 - Prob. 15CQCh. 10 - Prob. 16CQCh. 10 - Prob. 17CQCh. 10 - Prob. 18CQCh. 10 - Prob. 19CQCh. 10 - Prob. 20CQCh. 10 - Prob. 21CQCh. 10 - Prob. 22CQCh. 10 - In a buckyball three of the bonds around each...Ch. 10 - Prob. 24CQCh. 10 - Prob. 25ECh. 10 - Prob. 26ECh. 10 - Prob. 27ECh. 10 - Prob. 28ECh. 10 - Prob. 29ECh. 10 - Prob. 30ECh. 10 - Prob. 31ECh. 10 - Prob. 32ECh. 10 - Prob. 33ECh. 10 - Prob. 34ECh. 10 - By expanding an arbitrary U(x) in a power series...Ch. 10 - Prob. 36ECh. 10 - Prob. 37ECh. 10 - Prob. 38ECh. 10 - Prob. 39ECh. 10 - Prob. 40ECh. 10 - Prob. 41ECh. 10 - Prob. 42ECh. 10 - Prob. 43ECh. 10 - As noted in Example 10.2, the HD molecule differs...Ch. 10 - Prob. 45ECh. 10 - Prob. 46ECh. 10 - Prob. 47ECh. 10 - Prob. 48ECh. 10 - Prob. 49ECh. 10 - Prob. 50ECh. 10 - Prob. 51ECh. 10 - Prob. 52ECh. 10 - Prob. 53ECh. 10 - Prob. 54ECh. 10 - Carry out the integration indicated in equation...Ch. 10 - Prob. 56ECh. 10 - Prob. 57ECh. 10 - Prob. 58ECh. 10 - Prob. 59ECh. 10 - Prob. 60ECh. 10 - Prob. 61ECh. 10 - Prob. 62ECh. 10 - Prob. 63ECh. 10 - Prob. 64ECh. 10 - Prob. 65ECh. 10 - Prob. 66ECh. 10 - Prob. 67ECh. 10 - Prob. 68ECh. 10 - Prob. 69ECh. 10 - Prob. 70ECh. 10 - Prob. 71ECh. 10 - Prob. 72ECh. 10 - Prob. 73ECh. 10 - Prob. 74ECh. 10 - The magnetic field at the surface of a long Wire...Ch. 10 - Prob. 76ECh. 10 - Prob. 77CECh. 10 - Prob. 78CECh. 10 - Prob. 79CE
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- Given the fermi energy and electron concentration 7.00 eV and 8.0×10²6 e¯/m³ respectively of a Copper of resistivity 1.7×108 2-m, calculate the mean free path. (a) 3780 nm (b) 5000 nm (c) 4100 nm (d) 7000 nmarrow_forwardFor silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.arrow_forwardFor a certain semiconductor, the Fermi energy is in the middle of its band gap. If the temperature of the semiconductor is 285 K, find the probability that a state at the bottom of the conduction band is occupied if the band gap is 1.5 eV.arrow_forward
- The maximum velocity of carriers in silicon is approximately 107 cm/s. (a) What is the maximum drift current density that can be supported in a region of p-type silicon with a doping of 5 × 1017/cm3? (b) Repeat for a region of n-type silicon with a doping of 4×1015/cm3?arrow_forwardFor silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.arrow_forwardConsider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.arrow_forward
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