Modern Physics
2nd Edition
ISBN: 9780805303087
Author: Randy Harris
Publisher: Addison Wesley
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Question
Chapter 10, Problem 54E
To determine
To find:The vibrational devition of atoms
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Chapter 10 Solutions
Modern Physics
Ch. 10 - Prob. 1CQCh. 10 - Prob. 2CQCh. 10 - Prob. 3CQCh. 10 - Of N2,O2 , and F2 , none has an electric dipole...Ch. 10 - It takes less energy to dissociate a diatomic...Ch. 10 - Prob. 6CQCh. 10 - Prob. 7CQCh. 10 - Prob. 8CQCh. 10 - Prob. 9CQCh. 10 - Prob. 10CQ
Ch. 10 - Prob. 11CQCh. 10 - In the boron atom, the single 2p electron does not...Ch. 10 - Prob. 13CQCh. 10 - Prob. 14CQCh. 10 - Prob. 15CQCh. 10 - Prob. 16CQCh. 10 - Prob. 17CQCh. 10 - Prob. 18CQCh. 10 - Prob. 19CQCh. 10 - Prob. 20CQCh. 10 - Prob. 21CQCh. 10 - Prob. 22CQCh. 10 - In a buckyball three of the bonds around each...Ch. 10 - Prob. 24CQCh. 10 - Prob. 25ECh. 10 - Prob. 26ECh. 10 - Prob. 27ECh. 10 - Prob. 28ECh. 10 - Prob. 29ECh. 10 - Prob. 30ECh. 10 - Prob. 31ECh. 10 - Prob. 32ECh. 10 - Prob. 33ECh. 10 - Prob. 34ECh. 10 - By expanding an arbitrary U(x) in a power series...Ch. 10 - Prob. 36ECh. 10 - Prob. 37ECh. 10 - Prob. 38ECh. 10 - Prob. 39ECh. 10 - Prob. 40ECh. 10 - Prob. 41ECh. 10 - Prob. 42ECh. 10 - Prob. 43ECh. 10 - As noted in Example 10.2, the HD molecule differs...Ch. 10 - Prob. 45ECh. 10 - Prob. 46ECh. 10 - Prob. 47ECh. 10 - Prob. 48ECh. 10 - Prob. 49ECh. 10 - Prob. 50ECh. 10 - Prob. 51ECh. 10 - Prob. 52ECh. 10 - Prob. 53ECh. 10 - Prob. 54ECh. 10 - Carry out the integration indicated in equation...Ch. 10 - Prob. 56ECh. 10 - Prob. 57ECh. 10 - Prob. 58ECh. 10 - Prob. 59ECh. 10 - Prob. 60ECh. 10 - Prob. 61ECh. 10 - Prob. 62ECh. 10 - Prob. 63ECh. 10 - Prob. 64ECh. 10 - Prob. 65ECh. 10 - Prob. 66ECh. 10 - Prob. 67ECh. 10 - Prob. 68ECh. 10 - Prob. 69ECh. 10 - Prob. 70ECh. 10 - Prob. 71ECh. 10 - Prob. 72ECh. 10 - Prob. 73ECh. 10 - Prob. 74ECh. 10 - The magnetic field at the surface of a long Wire...Ch. 10 - Prob. 76ECh. 10 - Prob. 77CECh. 10 - Prob. 78CECh. 10 - Prob. 79CE
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- Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.arrow_forwardIn a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2p subshell of the isolated silicon atom?arrow_forwardCalculate No(E), the density of occupied states, for copper atT = 1000 K for an energy E of (a) 4.00 eV, (b) 6.75 eV, (c) 7.00 eV,(d) 7.25 eV, and (e) 9.00 eV..The Fermi energy for copper is 7.00 eVarrow_forward
- For a solid metal having a Fermi energy of 8.500 eV, what is the probability, at room temperature, that a state having an energy of 8.520 eV is occupied by an electron?arrow_forwardConsider a CO molecule that is initially in the ground state of n = 0, l = 0. If the energy of a vibrational transition from the n = 0 state to the n = 1 state in CO could instead be absorbed in a rotational transition, what would be the value of l for the final state?arrow_forwardthe carrier distribution in the conduction band is:nc(E) = gc(E) . f(E) a) For a non-degenerate semiconductor, show that nc(E) has a maximum at E = Ec + ½ kT b) What is the ratio of carrier distribution at E = Ec + kT to that of the max value ?arrow_forward
- For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.arrow_forwardFor the free electrons in a solid, what is the value of the E/EF ratio knowing that the occupancy factor of the energy level E is equal to 0.05 at a temperature such that kT=EF/4? (NOTE: EF is the Fermi energy) a) 3,65b) 4,20c) 0,26d) 1,74e) 0,04arrow_forwardFind the equilibrium electron and hole concentration and the location of the Fermi level for a silicon sample at27∘Cdoped uniformly with5×1015 cm−3phosphorus atoms and4×1015 cm−3boron atoms.arrow_forward
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