Modern Physics
2nd Edition
ISBN: 9780805303087
Author: Randy Harris
Publisher: Addison Wesley
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Question
Chapter 10, Problem 62E
(a)
To determine
The comparison for the equation
(b)
To determine
Whether the results suggest that minority carriers bumped up from donor levels should outnumber minority carriers created by thermal excitation across the whole
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For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0, calculate the equilibrium hole concentration in cm^{-3}. Values within 5% error will be considered correct.
For silicon at T = 500 K with donor density N_D = 5* 10^{13} cm^ and acceptor density N_A = 0 calculate the equilibrium hole concentration in cm^{-3}. In this problem, you can assume the bandgap energy and effective masses are independent of temperature and use the room temperature values for them. Values within 5% error will be considered correct.
Consider a n-type Si crystal at room temperature (300K) doped with 6 x1016 cm-3 arsenic impurity atoms and with certain number of shallowholes. Find out the equilibrium electron concentration, hole concentrationand Fermi level EF with respect to Ei, and the conduction band edge EC.For Si at 300K, the value of ni is 1.45 x 1010 cm-3 and k = 1.38 x 10-23 J/K,1eV = 1.60 x 10-19J. The band gap energy, Eg, of Si is 1.2eV.Solution:n @ Nd = 6 x 1016 cm-3.In equilibrium condition, hole concentration = 3.5 x 103 cm-3.EF – EI = 0.396eVEC – EF = 0.164eV.
Chapter 10 Solutions
Modern Physics
Ch. 10 - Prob. 1CQCh. 10 - Prob. 2CQCh. 10 - Prob. 3CQCh. 10 - Of N2,O2 , and F2 , none has an electric dipole...Ch. 10 - It takes less energy to dissociate a diatomic...Ch. 10 - Prob. 6CQCh. 10 - Prob. 7CQCh. 10 - Prob. 8CQCh. 10 - Prob. 9CQCh. 10 - Prob. 10CQ
Ch. 10 - Prob. 11CQCh. 10 - In the boron atom, the single 2p electron does not...Ch. 10 - Prob. 13CQCh. 10 - Prob. 14CQCh. 10 - Prob. 15CQCh. 10 - Prob. 16CQCh. 10 - Prob. 17CQCh. 10 - Prob. 18CQCh. 10 - Prob. 19CQCh. 10 - Prob. 20CQCh. 10 - Prob. 21CQCh. 10 - Prob. 22CQCh. 10 - In a buckyball three of the bonds around each...Ch. 10 - Prob. 24CQCh. 10 - Prob. 25ECh. 10 - Prob. 26ECh. 10 - Prob. 27ECh. 10 - Prob. 28ECh. 10 - Prob. 29ECh. 10 - Prob. 30ECh. 10 - Prob. 31ECh. 10 - Prob. 32ECh. 10 - Prob. 33ECh. 10 - Prob. 34ECh. 10 - By expanding an arbitrary U(x) in a power series...Ch. 10 - Prob. 36ECh. 10 - Prob. 37ECh. 10 - Prob. 38ECh. 10 - Prob. 39ECh. 10 - Prob. 40ECh. 10 - Prob. 41ECh. 10 - Prob. 42ECh. 10 - Prob. 43ECh. 10 - As noted in Example 10.2, the HD molecule differs...Ch. 10 - Prob. 45ECh. 10 - Prob. 46ECh. 10 - Prob. 47ECh. 10 - Prob. 48ECh. 10 - Prob. 49ECh. 10 - Prob. 50ECh. 10 - Prob. 51ECh. 10 - Prob. 52ECh. 10 - Prob. 53ECh. 10 - Prob. 54ECh. 10 - Carry out the integration indicated in equation...Ch. 10 - Prob. 56ECh. 10 - Prob. 57ECh. 10 - Prob. 58ECh. 10 - Prob. 59ECh. 10 - Prob. 60ECh. 10 - Prob. 61ECh. 10 - Prob. 62ECh. 10 - Prob. 63ECh. 10 - Prob. 64ECh. 10 - Prob. 65ECh. 10 - Prob. 66ECh. 10 - Prob. 67ECh. 10 - Prob. 68ECh. 10 - Prob. 69ECh. 10 - Prob. 70ECh. 10 - Prob. 71ECh. 10 - Prob. 72ECh. 10 - Prob. 73ECh. 10 - Prob. 74ECh. 10 - The magnetic field at the surface of a long Wire...Ch. 10 - Prob. 76ECh. 10 - Prob. 77CECh. 10 - Prob. 78CECh. 10 - Prob. 79CE
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Similar questions
- For silicon at T = 300 K, calculate the equilibrium electron concentration in cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.arrow_forwardFor a certain semiconductor, the Fermi energy is in the middle of its band gap. If the temperature of the semiconductor is 285 K, find the probability that a state at the bottom of the conduction band is occupied if the band gap is 0.005eV.arrow_forwardDetermine the thermal-equilibrium concentrations of electrons and holes in silicon at T =300 K if the Fermi energy level is 0.2 eV above the valence-band energy. Assume that the bandgap of semiconductor is 1 eV. Nc=2x1019 cm-3 and Nv=1x1019 cm-3. Take kT=25.875 meVarrow_forward
- Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).arrow_forwardIn a silicon lattice, where should you look if you want to find (a) a conduction electron, (b) a valence electron, and (c) an electron associated with the 2p subshell of the isolated silicon atom?arrow_forwardAn unknown semiconductor has a band gap, Eg =1.1 eV and NC = NV where NC and NV are effective density of states in the conduction and valence band respectively. It is doped with 1015 cm-3 donors, where the donor level is 0.2 eV below conduction band minimum EC. Given that EF is 0.25 eV below EC, calculate intrinsic carrier density (ni), and the concentration of electrons and holes in the semiconductor at 300 Karrow_forward
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