Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
9th Edition
ISBN: 9781259989452
Author: Hayt
Publisher: Mcgraw Hill Publishers
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Chapter 12, Problem 2E
(a)
To determine
The gate to source voltage and the drain to ground voltage.
(b)
To determine
The power lost at the gate-source terminal.
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An npn transistor with IS = 1 × 10−16 μA, αF =0.975, and αR = 0.5 is operating with VB E = 0.70 Vand VBC = 0.50 V. By definition, this transistor isoperating in the saturation region. However, in thediscussion it was noted that this transistor actually behaves as if it is still in the forwardactive region even though VBC > 0. Why? Use thetransport model equations to justify your answer
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A transistor has Tox = 40 nm, VTN = 1 V,μn = 500 cm2/V ·s, L = 2 μm, and W = 20 μm.What are Kn and the saturated value of iD for thistransistor if VGS = 4 V? (b) The technology isscaled down by a factor of 2. What are the newvalues of Tox, W, L, VTN , VGS, Kn, and iD?
Chapter 12 Solutions
Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
Ch. 12.1 - Let and . Find (a) Vad; (b) Vbc; (c) Vcd.Ch. 12.2 - Prob. 2PCh. 12.2 - Modify Fig. 12.9 by adding a 1.5 resistance to...Ch. 12.3 - A balanced three-phase three-wire system has a...Ch. 12.3 - A balanced three-phase three-wire system has a...Ch. 12.3 - Three balanced Y-connected loads are installed on...Ch. 12.4 - Each phase of a balanced three-phase -connected...Ch. 12.4 - Prob. 8PCh. 12.5 - Determine the wattmeter reading in Fig. 12.24,...Ch. 12.5 - Prob. 10P
Ch. 12 - Prob. 1ECh. 12 - Prob. 2ECh. 12 - Prob. 3ECh. 12 - Describe what is meant by a polyphase source,...Ch. 12 - Prob. 5ECh. 12 - Prob. 6ECh. 12 - Prob. 7ECh. 12 - Prob. 8ECh. 12 - Prob. 9ECh. 12 - Prob. 10ECh. 12 - The single-phase three-wire system of Fig. 12.31...Ch. 12 - Prob. 12ECh. 12 - Referring to the balanced load represented in Fig....Ch. 12 - Prob. 14ECh. 12 - Prob. 15ECh. 12 - Consider a simple positive phase sequence,...Ch. 12 - Assume the system shown in Fig. 12.34 is balanced,...Ch. 12 - Repeat Exercise 17 with Rw = 10 , and verify your...Ch. 12 - Prob. 19ECh. 12 - Prob. 20ECh. 12 - Prob. 21ECh. 12 - Prob. 22ECh. 12 - A three-phase system is constructed from a...Ch. 12 - Prob. 24ECh. 12 - Each load in the circuit of Fig. 12.34 is composed...Ch. 12 - Prob. 26ECh. 12 - Prob. 27ECh. 12 - A three-phase load is to be powered by a...Ch. 12 - For the two situations described in Exercise 28,...Ch. 12 - Prob. 30ECh. 12 - Prob. 31ECh. 12 - Prob. 32ECh. 12 - Repeat Exercise 32 if Rw = 1 . Verify your...Ch. 12 - Prob. 34ECh. 12 - Prob. 35ECh. 12 - Prob. 36ECh. 12 - A wattmeter is connected into the circuit of Fig....Ch. 12 - Find the reading of the wattmeter connected in the...Ch. 12 - (a) Find both wattmeter readings in Fig. 12.39 if...Ch. 12 - Circuit values for Fig. 12.40 are , , , , . Find...Ch. 12 - Prob. 41ECh. 12 - Prob. 42ECh. 12 - (a) Is the load represented in Fig. 12.41...Ch. 12 - Prob. 44E
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- What transistor configuration is used? Calculate the values of VE, IE , IC and VC 3. Draw the ac equivalent circuit. Show all values.arrow_forward3) If IDSS = 8 mA and VP = - 6 V in the circuit with JFET transistors given below, calculate the current and voltage values of ID , VDS , VGS, VS, VDG and VD. (R1 = 910 KΩ, R2 = 220 KΩ, RD = 2.2KΩ, Rss = 1.2 KΩ, VDD = 18 V)arrow_forwardA bipolar transistor is operating with vBE =+0.7 V and vBC = +0.3 V. By the strict definitionsgiven in the chapter on bipolar transistors, this transistoris operating in the saturation region. Use thetransport equations to demonstrate that it actuallybehaves as if it is still in the forward-active region.Discuss this result. (You may use IS = 10−15 A,αF = 0.98, and αR = 0.2.)arrow_forward
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- Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.arrow_forwardThe transistor in the circuit below is an enhancement n-type MOSFET with kn’= 400 μA/V2, W=4 μm, L=800 nm, and Vtn= 0.8 V. Solve the circuit below to find all the node voltages and all the branch currents.arrow_forwardFor the circuit given below, let VBEQ=0.7 V, then the Q-point(VCEQ,ICEQ) equals:arrow_forward
- 4. Using (A) Exact analysis, compute forVTH, RTH, IE and VCE. Also, using (B) Approximate Analysis, compute for VB, VE, IE, VCEarrow_forwardAnswer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).arrow_forwardA transistor in a circuit showed has the following Maximum rating Pdmax=800mAw, Vcemax=15v, Icmax=100mA. Determine the maximum value to which Vce can be adjusted with out exceeding any rating which rating will be exceeded firstarrow_forward
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What is a Power Amplifier, And Do I Need One?; Author: Sweetwater;https://www.youtube.com/watch?v=2wkmSm4V00M;License: Standard Youtube License