Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 7, Problem 7.56P
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Chapter 7 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 7 - (a) For the circuit shown in Figure 7.2, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters of...Ch. 7 - For the equivalent circuit shown in Figure 7.13,...Ch. 7 - The equivalent circuit in Figure 7.14 has circuit...Ch. 7 - The parameters in the circuit shown in Figure 7.15...Ch. 7 - For the circuit shown in Figure 7.2 1(a), the...Ch. 7 - Consider the circuit shown in Figure 7.22(a). The...Ch. 7 - For the emitterfollower circuit shown in Figure...Ch. 7 - The circuit shown in Figure 7.27(a) has parameters...Ch. 7 - Consider the common-base circuit shown in Figure...
Ch. 7 - The commonemitter circuit shown in Figure 7.34...Ch. 7 - A bipolar transistor has parameters o=120 ,...Ch. 7 - Prob. 7.9EPCh. 7 - For the circuit in Figure 7.41(a), the parameters...Ch. 7 - A bipolar transistor is biased at ICQ=120A and its...Ch. 7 - For the transistor described in Example 7.9 and...Ch. 7 - The parameters of a bipolar transistor are: o=150...Ch. 7 - The parameters of an nchannel MOSFET are...Ch. 7 - For the circuit in Figure 7.55, the transistor...Ch. 7 - An nchannel MOSFET has parameters Kn=0.4mA/V2 ,...Ch. 7 - An nchannel MOSFET has a unitygain bandwidth of...Ch. 7 - For a MOSFET, assume that gm=1.2mA/V . The basic...Ch. 7 - The transistor in the circuit in Figure 7.60 has...Ch. 7 - Consider the commonbase circuit in Figure 7.64....Ch. 7 - The cascode circuit in Figure 7.65 has parameters...Ch. 7 - Prob. 7.12TYUCh. 7 - For the circuit in Figure 7.72, the transistor...Ch. 7 - Describe the general frequency response of an...Ch. 7 - Describe the general characteristics of the...Ch. 7 - Describe what is meant by a system transfer...Ch. 7 - What is the criterion that defines a corner, or...Ch. 7 - Describe what is meant by the phase of the...Ch. 7 - Describe the time constant technique for...Ch. 7 - Describe the general frequency response of a...Ch. 7 - Sketch the expanded hybrid model of the BJT.Ch. 7 - Prob. 9RQCh. 7 - Prob. 10RQCh. 7 - Prob. 11RQCh. 7 - Sketch the expanded smallsignal equivalent circuit...Ch. 7 - Define the cutoff frequency for a MOSFET.Ch. 7 - Prob. 14RQCh. 7 - Why is there not a Miller effect in a commonbase...Ch. 7 - Describe the configuration of a cascode amplifier.Ch. 7 - Why is the bandwidth of a cascode amplifier...Ch. 7 - Why is the bandwidth of the emitterfollower...Ch. 7 - Prob. 7.1PCh. 7 - Prob. 7.2PCh. 7 - Consider the circuit in Figure P7.3. (a) Derive...Ch. 7 - Consider the circuit in Figure P7.4 with a signal...Ch. 7 - Consider the circuit shown in Figure P7.5. (a)...Ch. 7 - A voltage transfer function is given by...Ch. 7 - Sketch the Bode magnitude plots for the following...Ch. 7 - (a) Determine the transfer function corresponding...Ch. 7 - Consider the circuit shown in Figure 7.15 with...Ch. 7 - For the circuit shown in Figure P7.12, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters...Ch. 7 - The transistor shown in Figure P7.14 has...Ch. 7 - Consider the circuit shown in Figure P7.15. The...Ch. 7 - The transistor in the circuit shown in Figure...Ch. 7 - For the common-emitter circuit in Figure P7.17,...Ch. 7 - The transistor in the circuit in Figure P7.20 has...Ch. 7 - For the circuit in Figure P7.21, the transistor...Ch. 7 - (a) For the circuit shown in Figure P7.22, write...Ch. 7 - Consider the circuit shown in Figure P7.23. (a)...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - A capacitor is placed in parallel with RL in the...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - Prob. D7.27PCh. 7 - The circuit in Figure P7.28 is a simple output...Ch. 7 - Reconsider the circuit in Figure P728. The...Ch. 7 - Consider the circuit shown in Figure P7.32. The...Ch. 7 - The commonemitter circuit in Figure P7.35 has an...Ch. 7 - Consider the commonbase circuit in Figure 7.33 in...Ch. 7 - Prob. 7.39PCh. 7 - The parameters of the transistor in the circuit in...Ch. 7 - In the commonsource amplifier in Figure 7.25(a) in...Ch. 7 - A bipolar transistor has fT=4GHz , o=120 , and...Ch. 7 - A highfrequency bipolar transistor is biased at...Ch. 7 - (a) The frequency fT of a bipolar transistor is...Ch. 7 - The circuit in Figure P7.48 is a hybrid ...Ch. 7 - Consider the circuit in Figure P7.49. Calculate...Ch. 7 - A common-emitter equivalent circuit is shown in...Ch. 7 - For the common-emitter circuit in Figure 7.41(a)...Ch. 7 - For the commonemitter circuit in Figure P7.52,...Ch. 7 - Consider the circuit in Figure P7.52. The resistor...Ch. 7 - The parameters of the circuit shown in Figure...Ch. 7 - The parameters of an nchannel MOSFET are kn=80A/V2...Ch. 7 - Find fT for a MOSFET biased at IDQ=120A and...Ch. 7 - Fill in the missing parameter values in the...Ch. 7 - (a) An nchannel MOSFET has an electron mobility of...Ch. 7 - A commonsource equivalent circuit is shown in...Ch. 7 - Prob. 7.60PCh. 7 - The parameters of an ideal nchannel MOSFET are...Ch. 7 - Figure P7.62 shows the highfrequency equivalent...Ch. 7 - For the FET circuit in Figure P7.63, the...Ch. 7 - The midband voltage gain of a commonsource MOSFET...Ch. 7 - Prob. 7.65PCh. 7 - Prob. 7.67PCh. 7 - The bias voltages of the circuit shown in Figure...Ch. 7 - For the PMOS commonsource circuit shown in Figure...Ch. 7 - In the commonbase circuit shown in Figure P7.70,...Ch. 7 - Repeat Problem 7.70 for the commonbase circuit in...Ch. 7 - In the commongate circuit in Figure P7.72, the...
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- Suppose the output as shown is accidentallyshorted to ground. (a) Calculate the emitter currentin the circuit if RS = 0 and βF = 100. (b) Repeatfor RS = 130 .arrow_forwardConsider a self-biasing JFET network where RG = 1 MΩ, VD = 12V, IDSS = 15mA, VP = -3 V. Draw the transfer characteristics curve and determine required values of RD and RS assuming VDD = ( 80÷ 5 ) +15 V, IDQ = 5 + ( 80 ÷ 20 ) mAarrow_forwardDetermine the point Q for the JFET circuit shown and perform the curve transfer showing that point. We have the following data from the different elements of the circuit such as: RG = 10 MΩ, RD = 3.3 kΩ, RS = 780 Ω and powered by a 9 volt source. The manufacturer's sheet indicates that it has IDSS = 4 mA and VP = −6 V. Include transfer characteristic graph.arrow_forward
- Find 1)The value of CE required to give fL = 200 Hz , CE = ............... 2)The slope of D.C.L.L = ......................... 3)The value of RE which makes the cct. bias-stable is RE = ................... 4)When CE is removed , the value of Av = ................. Electronics 2arrow_forwardWith beta = 100, Vbe = 0.7V and Vce,sat = 0, solve for the value of Vo if Rs = 0 and Vs = 3Varrow_forwardThe n-channel FETs below have K n’ = 100μA/V^2, W = 60μm, L = 3μm, Vt = 0.7V, and λ= 0.03V ^-1.a) Label the source, gate, and drain with S, G, and D respectively for M1 and M2b) What is the region of operation of MOSFET M1?c) neglecting channel-length modulation (λ = 0), what is I D of M1?d) M2 is in saturation with I D = 640μA (neglecting λ). What is V G of M2?e) What is the current, I D, of M2 taking channel length modulation into consideration?arrow_forward
- The following are the required circuit parameters for the T1 transistor in the following circuit.VBE=0.7 V, β=120, Cbc=Cμ=100pF, Cπ=Cbe=220pF, VA=∞, VT=26mV, and ro negligence; d) Find ro output resistance. e) Find the lower cut frequencies. f) Find the upper cutting frequencies R=409arrow_forwardDetermine IDQ and VGSQ for voltage divider bias configurationfor the JFET using graphical analysis. In addition to obtaining the VD, ?Sand VDS.We have the following data of the different elements of the circuit, such as:R1 = 3.3 MΩ, R2 = 3.3 MΩ, RD = 860 Ω, RS = 2.2 kΩ and powered by one source 12 volts. The manufacturer's sheet indicates that IDSS = 12 mA and VP = −3 V. Include the transfer characteristic graph to obtain the values of thepoint Q.arrow_forward(VSB modulation) Explain DSB and VSB signals. (Similarities and differences). Interpret the resulting graphs.( m(t) c(t) vsb dsb )arrow_forward
- The following are the required circuit parameters for the T1 transistor in the following circuit. VBE=0.7 V, β=100, Cbc=Cμ=10pF,Cπ=Cbe=20pF, VA=∞, VT=26mV, and ro negligence;a) Find IB, IC and IE currents.b) Find voltages at VB, VC, VE, VCE, X and Y.c) Find the lower cut frequencies and their values in dB.d) Find the upper cutting frequencies.e) Find BW and fo values by drawing the bode curve.R:409arrow_forwardNetworking A digital signal is to be designed to permit 100 Mbps for a bandwidth of 10 MHz. Determine: (1) Number of levels (2) signal to noise ratio. (a) According to Nyquist Formulaarrow_forward(a) What is the total input capacitance in the circuit as shown if Cπ = 20 pF, Cμ = 1 pF, IC = 5 mA, and RL = 1 kΩ? What is the fT of this transistor? (b) Repeat for IC = 4 mA and RL = 2 kΩ.arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License