Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.12P
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The junction builds in voltage, the width of the depletion region and its extent in each of
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When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?
6. Principles of Electronic Materials and Devices (4th Edition) Chapter 7, question 11
7.11 Ionic and electronic polarization. Consider a CsBr crystal that has the CsCl unit cell crystal structure (one Cs+-Br- pair per unit cell) with a lattice parameter (a) of 0.430 nm. The electronic polarization of Cs+ and Br- ions are 2.7x10-40 F m2 and 5.3x10-40 F m2, respectively, and the mean ionic polarizability per ion pair is 5.8x10-40 F m2. What is the low-frequency dielectric constant and that at optical frequencies?
A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobilityof the semiconductor sample.arrow_forwardThis problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25×10^15" cm" arsenic sample b: 10^16 cm boron, 5x10^15 cm phosphorous sample c : intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility He is 1600 cm /.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier concentration n, is (1/352) x10^10 cm.a- Find the resistivity in (Ω.cm) of sample a. b- Find the conductivity in (Ω.cm)-1 of sample bc- find the resistivity in (Ω.cm) of sample c.arrow_forwardGiven a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.arrow_forward
- Consider a two-dimensional crystal with rectangular shape, dimensions 10 um x 1 um, lattice spacing 0.15 nm (assume square lattice). What is the Fermi level assuming one electron per atom? What is the density of states as a function of electron energy?arrow_forwardA lightly-doped p-type Si region has a hole concentration of 1*10^11 cm-3 at a temperature of 320 K. Assume the hole mobility is 470 cm^2/Vs and the electron mobility is 1430 cm^2/Vs at 320 K. The bandgap of Si is 1.12 eV. Calculate the resistivity of this Si region at 320 K.arrow_forwardA silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.arrow_forward
- For an ideal Si-SiO2 MOS capacitor with d = 5 nm, NA = 1017 cm–3, find the applied voltage and the electric field at the interface required to make the silicon surface intrinsic.arrow_forwardIf, for a particular junction, the acceptor concentration is 1017/cm3 and the donor concentration is 1016/cm3, find the junction built-in voltage. Assume ni = 1.5 x 1010/cm3. Also, find the width of the depletion region (W) and its extent in each of the p and n regions when the junction terminals are left open. Calculate the magnitude of the charge stored on either side of the junction. Assume that the junction area is 10μm2.arrow_forwardFor a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width ϗ(kai)DT (μm) when the surface is inverted.arrow_forward
- For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii) For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.arrow_forwardA 10KQ resistor is made of two strips connected in parallel, each one has 40µm thick, and 6mm long, one strip is of intrinsic germanium and has 0.5mm wide. Determine the width of other strip if it made of Ge., doped with 10 21 donor atom/cm ,at the working temperature. The intrinsic carrier density of Ge is 2.5 x 1019 m3, and the electron and hole mobilities are 0.4 m2 N.sec. and 0.2 m? N.sec. respectively.arrow_forwardBelow is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively. a) Calculate the built-in potential Vbi of the p-n junction at 300 K in this solar cell. b) Calculate the depletion width W under thermal equilibrium at 300 K. c) Derive the expression of the power output as function of forward bias voltage V. d) Estimate the maximum power output.arrow_forward
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