Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3.2, Problem 3.3E
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Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
A silicon semiconductor material at T = 300 K is doped with arsenic atoms to a concentration of 2*10 ^15 cm -3 and with boron atoms to a concentration of 1.2*10 ^15 cm -3 . (a) Is the material n type or p type? (b) Determine n0 and p0 . (c) Additional boron atoms are to be added such that the hole concentration is 4*10 15 cm -3 . What concentration of boron atoms must be added and what is the new value of n0?
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Find the type and electron and hole concentrations in a silicon sample at room temperature if it is doped with a boron concentration of 1016/cm3 and a phosphorus concentration of 2×1015/cm3.
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Find the type and electron and hole concentrations in a silicon sample at a temperature of 400 K if it is doped with a boron concentration of 1016/cm3 and a phosphorus concentration of 2×1015/cm3.arrow_forwardIf the Fermi level in impure silicon is 0.4 eV above the center of the gap at a temperature of 300 K, where Eg = 1.1 eV and * ni = 1.45 x 1016 / m, what kind of impurities are there and what is their concentration?arrow_forwardSilicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3 and the value of kT/q to be 25 mV at 300 K. Compared to the undoped silicon, The Fermi level of doped silicon (a) Goes down by 0.13 eV (b) Goes up by 0.13 eV (c) Goes down by 0.427 eV (d) Goes up by 0.427 eVarrow_forward
- Silicon is doped with 1016 boron atoms/cm3. How many boron atoms will be in a silicon region that is 180 μm long, 2 μm wide, and 0.5 μm deep?arrow_forwardSilicon is doped with 1.2 10 16 B/cm3 Assume all dopants are ionized at 300K. Find the Fermi energy level?arrow_forwardTwo semiconductor material have exactly the same properties except that material A has a bandgap of 1.0 eV and material B has a bandgap energy of 1.2 eV. Estimate which semiconductor will be having higher intrinsic carrier concentration.arrow_forward
- The principal concentration in germanium semiconductor material at T=400K(cm-3*10^14)ni=?arrow_forwardSilicon is doped with an indium concentration of 8x10^19 / cm^3. Is indium a donor or acceptor impurity? Find the electron and hole concentrations, the electron and hole mobilities, and the resistivity of silicon material at 300K. Is this material n- or p-type?arrow_forwardSilicon is doped with a phosphorus concentration of 2×1016/cm3. What are NA and ND? What are the electron and hole mobilities? What are the mobilities if boron in a concentration of 3×1016/cm3 is added to the silicon? What are the resistivities?arrow_forward
- An n-type semiconductor sample has an electron density of 6.25 x 10 ^ 18 / cm ^ 3 at 300K. If the concentration of the carriers in this example is 2.5 x 10 ^ 13 / cm ^ 3, what is the hole density at this temperature?arrow_forwardA Rochelle salt crystal, having a voltage sensitivity of 0.098 V-m/N and thickness 2 mm,produced an output voltage of 200 volts under pressure. Find the pressure applied to thecrystal.arrow_forwardCalculate the room temperature electrical conductivity of silicon that has been doped with 1x10^24m^-3 of arsenic atoms. Assume values for electron and hole mobilities 0.033 and 0.0098m^2/V-s, respectively.arrow_forward
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