Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.13P
To determine

The junction builds in voltage, the width of the depletion region and its extent in each of p and n region when the junction terminal is left open. Also, the magnitude of the charge stored on either side of the junction.

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A certain PN junction has a linearly graded junction on the p-side, Na = ax, where x is the distance from the physical junction to p-side and a = 1019 cm-4 , and a uniform doping of 3 x 1014 cm-3 on the n-side. It is operated at T=300K. A. Calculate the electric field as a function of x? B. If the depletion layer width of the p-side is .8um at zero bias, find the total depletion layer width
An abrupt silicon junction of area 0.003 cm2 has the following parameters: ND = 2 * 10^18 cm-3 (n-side) and NA = 2 * 10^16cm-3 (p-side)a) Calculate the difference between the Fermi level and the intrinsic Fermi level onboth sides.b) Calculate the built-in potential at the junction in equilibrium and the depletionwidth.c) Draw and label the band diagram.d) Determine the total number of exposed accepters in the depletion region.
silicon p-n junction, with ϵr=11.7, is at room temperature T=300[K], with an intrinsic carrier concentration ni=1.5⋅1010[cm−3], an acceptor concentration of NA=3.2⋅1017[cm−3] and a donor concentration of ND=2.4⋅1015[cm−3]. Calculate the depletion region width W of this p-n junction. Give the answer in [μm].
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