Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.27P
To determine

The diffusion capacitance and transit time.

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A certain PN junction has a linearly graded junction on the p-side, Na = ax, where x is the distance from the physical junction to p-side and a = 1019 cm-4 , and a uniform doping of 3 x 1014 cm-3 on the n-side. It is operated at T=300K. A. Calculate the electric field as a function of x? B. If the depletion layer width of the p-side is .8um at zero bias, find the total depletion layer width
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii)  For φm= 4.36 eV and ϗ=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width xDT (μm) when the surface is inverted.
For a p-substrate silicon n-MOS capacitor at T=300 K, the substrate doping is NA= 4.25×10^16/cm 3 . The value of ni at T=300 K is 1.5×10^10/cm 3 . (I) What is bulk potential φB ?(ii) When the surface is inverted, what is the total surface band bending φs?(iii)  For φm= 4.36 eV and X=4.01 eV, what is the flat band voltage VFB?(iv) Find the maximum depletion width ϗ(kai)DT (μm) when the surface is inverted.
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