Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.18P
To determine
To show: The derivation of the depletion layer width and thecharge stored on either side of the junction for reverse bias
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A silicon pn junction has the following doping condition: 10^(16)cm³ at n-type side and 10^(17) cm at p-type side.calculate total depletion width W, widths of depletion regions at p and n sides of the junction.where
Vbi=0.754v
Emax=0.0000165v/m
An abrupt silicon junction of area 0.003 cm2 has the following parameters: ND = 2 * 10^18 cm-3 (n-side) and NA = 2 * 10^16cm-3 (p-side)a) Calculate the difference between the Fermi level and the intrinsic Fermi level onboth sides.b) Calculate the built-in potential at the junction in equilibrium and the depletionwidth.c) Draw and label the band diagram.d) Determine the total number of exposed accepters in the depletion region.
Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobilityof the semiconductor sample.arrow_forwardA certain PN junction has a linearly graded junction on the p-side, Na = ax, where x is the distance from the physical junction to p-side and a = 1019 cm-4 , and a uniform doping of 3 x 1014 cm-3 on the n-side. It is operated at T=300K. A. Calculate the electric field as a function of x? B. If the depletion layer width of the p-side is .8um at zero bias, find the total depletion layer widtharrow_forwardAn abrupt Si PN junction at 300 K is characterized by ND = 1016 cm-3 and NA = 2.5 x 1015 cm-3. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V.arrow_forward
- A one-sided p+- n Si junction at 300 K is doped with NA = 1019 cm-3 . Choose values of ND and junction area such that the junction capacitance Cj = 0.6 pF at VR = 5.0 V.arrow_forwardsilicon p-n junction, with ϵr=11.7, is at room temperature T=300[K], with an intrinsic carrier concentration ni=1.5⋅1010[cm−3], an acceptor concentration of NA=3.2⋅1017[cm−3] and a donor concentration of ND=2.4⋅1015[cm−3]. Calculate the depletion region width W of this p-n junction. Give the answer in [μm].arrow_forwardCalculate the diffusion capacitance of a bipolartransistor with a forward transit time τF = 50 psfor collector currents of (a) 2 μA, (b) 200 μA,(c) 20 mA.arrow_forward
- When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?arrow_forwardA junction employs ND = 5 × 1017 cm−3and NA = 4 × 1016 cm−3.(a) Determine the majority and minoritycarrier concentrations on both sides.(b) Calculate the built-in potential atT = 250 K, 300 K, and 350 K. Explainthe trend.arrow_forwardA silicon p+ - n junction has a donor doping of 7*10^17 cm-3 on the n −side and across-sectional area of 10^-3 cm^2. If Tp = 2 us and Dp = 10 cm2/s, calculate thecurrent with a forward bias of 0.75V at 300K.arrow_forward
- A Si p+-n junction has a donor doping of 5 x 10^16 cm^-3 on the n-side and a cross-sectional area of 10^-3 cm2. If tp = 1us and Dp = 10 cm^2/s, calculate the current with a forward bias of 0.5V at 300 Karrow_forwardGiven a Si sample of unknown doping, Hall measurement has been made and the following information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and the magnetic field is 30 nT (1T = 10^-4 Wb/cm2). If a Hall voltage of +10 mV is measured, find the Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.arrow_forwardBelow is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively. a) Calculate the built-in potential Vbi of the p-n junction at 300 K in this solar cell. b) Calculate the depletion width W under thermal equilibrium at 300 K. c) Derive the expression of the power output as function of forward bias voltage V. d) Estimate the maximum power output.arrow_forward
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