Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 3, Problem 3.9P
To determine
The concentration of donor.
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A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?
You are given an intrinsic silicon at "some" temperature. Assume that the intrinsic Fermi level, E, is exactly at the middle of the of the conduction band edge, Ec, and the valence band edge, Ev. It is known that the Fermi-Dirac probability for electrons at the conduction band edge is fe(E) = 5×102 at the unknown temperature.
1. What is the probability to find holes fh(Ec) at the conduction band edge?2. What is the Fermi-Dirac probability for electrons at the valence band edge, fe(Ev)?3. What is the Fermi-Dirac probability for holes at the valence band edge, fh(Ev)?
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
Chapter 3 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 3.1 - Prob. 3.1ECh. 3.2 - Prob. 3.2ECh. 3.2 - Prob. 3.3ECh. 3.3 - Prob. 3.4ECh. 3.3 - Prob. 3.5ECh. 3.3 - Prob. 3.6ECh. 3.4 - Prob. 3.7ECh. 3.4 - Prob. 3.8ECh. 3.4 - Prob. 3.9ECh. 3.5 - Prob. 3.10E
Ch. 3.5 - Prob. 3.11ECh. 3.5 - Prob. 3.12ECh. 3.5 - Prob. 3.13ECh. 3.6 - Prob. 3.14ECh. 3.6 - Prob. 3.15ECh. 3.6 - Prob. 3.16ECh. 3 - Prob. 3.1PCh. 3 - Prob. 3.2PCh. 3 - Prob. 3.3PCh. 3 - Prob. 3.4PCh. 3 - Prob. 3.5PCh. 3 - Prob. 3.6PCh. 3 - Prob. 3.7PCh. 3 - Prob. 3.8PCh. 3 - Prob. 3.9PCh. 3 - Prob. 3.10PCh. 3 - Prob. 3.11PCh. 3 - Prob. 3.12PCh. 3 - Prob. 3.13PCh. 3 - Prob. 3.14PCh. 3 - Prob. 3.15PCh. 3 - Prob. 3.16PCh. 3 - Prob. 3.17PCh. 3 - Prob. 3.18PCh. 3 - Prob. 3.19PCh. 3 - Prob. 3.20PCh. 3 - Prob. 3.21PCh. 3 - Prob. 3.22PCh. 3 - Prob. 3.23PCh. 3 - Prob. 3.24PCh. 3 - Prob. 3.25PCh. 3 - Prob. 3.26PCh. 3 - Prob. 3.27PCh. 3 - Prob. 3.28PCh. 3 - Prob. 3.29P
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- Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1×1016electron/m³) with the doping concentration of (2×1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.arrow_forwardAssume D = D0e^–Ea/kT is the diffusion coefficient of boron in silicon surface, whereD0 = 10.5 cm^2/s and Ea = 3.7 eV. The substrate is N-type silicon doped to 10^15 cm^3.N0 = 10^15 cm^2 of boron is introduced just below the silicon surface.(a) What is the junction depth after a 1-h drive-in at 1,100°C?(b) By how much will the junction depth change after 10^6 h (~100 years) of operation at100°Carrow_forwardWhat length of around copper wire of diameter 1mm will have a resistance 1K ohm if copper conductivity is 60 (ohm.m). A cylindrical piece of silicon having a diameter of 1mm doped with 10 ^ 20 / m ^ 3, atoms of phosphorous which are fully ionized. What length of this silicon would be required to give a resistance of 1K ohm if electronic mobility in silicon is 0.1m ^ 2? /V.Sec. ?arrow_forward
- Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration resistivity, and mobilityof the semiconductor sample.arrow_forwardGiven a Si sample of unknown doping, Hall measurement has been made and thefollowing information obtained: W = 0.05 cm, A = 1.6 x 10-3 cm2, I = 2.5 mA, and themagnetic field is 30 nT (1T = 104 Wb/cm2). If a Hall voltage of +10 mV is measured, findthe Hall coefficient, conductivity type, majority carrier concentration, resistivity, and mobility of the semiconductor sample.arrow_forwardA silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)arrow_forward
- If the hole mobility in a sample of silicon doped P-type is 108.0 cm^2/Vs at 275°K, then what is the diffusion constant for holes at this same temperature in cm^2/s? (Hint: Remember that kT/q = 26mV at 300°K, and use this to find the value for kT/q at 275°K.)arrow_forwardA semiconductor has a bandgap of 2 eV and effective densities of states of Nc = 1019/cm3 and Nv = 5x1018/cm3. If this semiconductor is doped with 1017donors/cm3 (fully ionized), calculate the hole, electron, and intrinsic carrier concentrations at 600C. Sketch the band diagram and indicate the position of EF.arrow_forwardA sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?arrow_forward
- The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differarrow_forwardWe consider a half-infinite bar of p-type silicon, as shown in the figure below, with a "minority carrier digester" at (x=0), such that the electron concentration, np, at this location is zero (i.e., np(x=0)=0). This bar is uniformly illuminated and as a result carriers are generated at a rate g′. The electric field in the bar is zero and we consider a steady-state situation. The expression for the excess minority carrier concentration as a function of x is given by:arrow_forwardSilicon wafers are made to create the most groundbreaking invention of mankind - microprocessors. If two silicon wafers (assume dipoles), both with masses of 125grams, radii of 10cm and thickness of 7μm are placed close to each other, separated by distance of 3cm, what is the electric field strength experienced by an electron placed on the surface of the negatively charged wafer? What is the final velocity of the electron upon reaching the positively charged plate? How much power is generated by the electron in its travel?arrow_forward
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