Enhancement−mode NMOS and PMOS devices both have parameters L = 4 μm and t ox = 500 A ˙ . For the NMOS transistor, V T N = + 0.6 V , μ n = 675 cm 2 /V − s , and the channel width is W n ; for the PMOS transistor, V T P = − 0.6 V , μ p = 375 cm 2 /V − s , and the channel width is W p . Design the widths of the two transistors such that they are electrically equivalent and the drain current in the PMOS transistor is I D = 0.8 mA when it is biased in the saturation region at V S G = 5 V . What are the values of K n , K p , W n , and W p ?
Enhancement−mode NMOS and PMOS devices both have parameters L = 4 μm and t ox = 500 A ˙ . For the NMOS transistor, V T N = + 0.6 V , μ n = 675 cm 2 /V − s , and the channel width is W n ; for the PMOS transistor, V T P = − 0.6 V , μ p = 375 cm 2 /V − s , and the channel width is W p . Design the widths of the two transistors such that they are electrically equivalent and the drain current in the PMOS transistor is I D = 0.8 mA when it is biased in the saturation region at V S G = 5 V . What are the values of K n , K p , W n , and W p ?
Solution Summary: The author explains the value of lK_p for a p-channel MOSFET in saturation.
Enhancement−mode NMOS and PMOS devices both have parameters
L
=
4
μm
and
t
ox
=
500
A
˙
. For the NMOS transistor,
V
T
N
=
+
0.6
V
,
μ
n
=
675
cm
2
/V
−
s
, and the channel width is
W
n
; for the PMOS transistor,
V
T
P
=
−
0.6
V
,
μ
p
=
375
cm
2
/V
−
s
, and the channel width is
W
p
. Design the widths of the two transistors such that they are electrically equivalent and the drain current in the PMOS transistor is
I
D
=
0.8
mA
when it is biased in the saturation region at
V
S
G
=
5
V
. What are the values of
K
n
,
K
p
,
W
n
, and
W
p
?
Answer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).
Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.
Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
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