Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Textbook Question
Chapter 3, Problem 3.25P
In a power MOS transistor, the maximum applied gate voltage is 24 V. If a safety factor of three is specified, determine the minimum thickness necessary for the silicon dioxide gate insulator.
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Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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- A p-channel enhancement MOSFET has Vto=−0.5 V and K=0.2 mA/V2. Assuming operation in the saturation region, what value of vGS is required for iD = 0.8 mA ?arrow_forwardThe figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0.NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6VPMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V (a) NMOS: VGS = 2.5V , VDS = 2.5V . PMOS: VGS = −0.5V , VDS = −1.25V .arrow_forwardThe figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0.NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6VPMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V (c) NMOS: VGS = 0.6V , VDS = 0.1V . PMOS: VGS = −2.5V , VDS = −0.7V .arrow_forward
- Write the Shockley equation for the emitter current of an npn transistor.arrow_forwardConsider an npn silicon transistor that has β=100, and iB=0.1 mA. Sketch iC versus vCE ,for vCE ranging from 0 to 5 V. Repeat for β=300.arrow_forwardQuestion: Compute the drian current flow IDS in PMOS transistor when Vd=0.9v , Vs=2v and Vg=0.5v assume the transistor W/l Ratio=?Hinds :=1 Question : For an channel MOSFET , if conduction perameter (kn) is 0.249 mA/v2 , drain to source voltage (vds) is VTN and gate to source voltage vgs is 2VTN where VTN=0.75v the current will be ?Hinds : =1arrow_forward
- Draw the common emitter configuration of NPN and PNP transistors with the source voltage and direction of the currents IB , IE , and ICarrow_forward4- What must be done for a voltage divider biased MOSFET in gate G to enter the cutoff region?5- What must be done for a voltage divider biased MOSFET in gate G to enter the linear/ ohmic region?6- Why are FETs preferred for low power applications?7- Write a difference between BJT and FET transistors.arrow_forwardCalculate the room-temperature threshold voltage for an n-channel aluminum gate MOS transistor fabricated on a p-type silicon substrate with an acceptor concentration of 2 × 1014cm-3. The gate oxide thickness is 50 nm and the fixed oxide charge density is 5 × 1010 cm-2.arrow_forward
- An NMOS transistor has parameters Kn = 1.1 mA/V^2 , VTN = 0.5 V, VDS = 0.5 V, and VGS = 2.0 V. Is the transistor in the saturation or nonsaturation region? What is the value of ID?arrow_forwardSuppose we have a certain pnp transistor that has VCE = −5 V, IC = 0.995 mA, and IE = 1.000 mA. Determine the values for α and β for this transistor.arrow_forwardThe Si transistor has = 50 and negligible leakage current.Let VCC =18 V, VEE = 4V; RE =200 , and RC =4k. (a) FindRB so that ICQ =2mA. (b) Determine the value of VCEQ forVB of part (a).arrow_forward
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