An NMOS transistor with V T N = 1 V has a drain current i D = 0.8 mA when υ G S = 3 V and υ D S = 4.5 V Calculate the drain current when: (a) υ G S = 2 V , υ D S = 4.5 V ; and (b) υ G S = 3 V , υ D S = 1 V . (Ans. (a) 0.2 mA (b) 0.6 mA)
An NMOS transistor with V T N = 1 V has a drain current i D = 0.8 mA when υ G S = 3 V and υ D S = 4.5 V Calculate the drain current when: (a) υ G S = 2 V , υ D S = 4.5 V ; and (b) υ G S = 3 V , υ D S = 1 V . (Ans. (a) 0.2 mA (b) 0.6 mA)
An NMOS transistor with
V
T
N
=
1
V
has a drain current
i
D
=
0.8
mA
when
υ
G
S
=
3
V
and
υ
D
S
=
4.5
V
Calculate the drain current when: (a)
υ
G
S
=
2
V
,
υ
D
S
=
4.5
V
; and (b)
υ
G
S
=
3
V
,
υ
D
S
=
1
V
. (Ans. (a) 0.2 mA (b) 0.6 mA)
(a)
Expert Solution
To determine
The value of drain current for the given conditions.
Answer to Problem 3.1EP
iD=0.2mA
Explanation of Solution
Given:
The value of drain current is iD=0.8mA when vGS=3V and vDS=4.5V .
VTN=1V
New vGS=2V,vDS=4.5V
Calculation:
Consider NMOS which is also called n-channel enhancement MOSFET and assuming that the transistor is biased in saturation region, that is, (vGS>vTN) , the drain current is given by
iD=Kn(vGS−VTN)2
The value of conduction parameter Kn is given by
Kn=iD(vGS−VTN)2Kn=0.8×10−3(3−1)2Kn=0.2mA/V2
As,
vDS(sat)=vGS−VTNvDS(sat)=2−1vDS(sat)=1V
Comparing vDS and vDS(sat)
vDS>vDS(sat)(∵4.5>1)
Therefore, the transistor is in saturation. Substituting the values in the equation,
iD=Kn(vGS−VTN)2iD=0.2×10−3(2−1)2iD=0.2mA
(b)
Expert Solution
To determine
The value of drain current for given values.
Answer to Problem 3.1EP
iD=0.6mA
Explanation of Solution
Given:
The value of drain current is iD=0.8mA when vGS=3V and vDS=4.5V .
VTN=1V
New vGS=3V,vDS=1V
Calculation:
As,
vDS(sat)=vGS−VTNvDS(sat)=3−1vDS(sat)=2V
Comparing vDS and vDS(sat)
vDS<vDS(sat)(∵1<2)
Therefore, the transistor is in non-saturation (vDS<vDS(sat))
Drain current is given by
iD=Kn[2(vGS−VTN)vDS−vDS2]
Substituting the values in the equation,
iD=0.2×10−3[2(3−1)1−12]iD=0.2×10−3[6−2−1]iD=0.6mA
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Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.
Answer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).
Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
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