Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 3, Problem 3.45P
To determine
The value of ratio
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For the circuit shown in Figure Q3a, calculate VC and VCE
3.For the Silicon transistors of the circuit of figure 3, β = 110 and the Early Voltage is equal to infinity a) Determine the value of the gain Av = vo/vs2Note: It is known that Vcc = 25v.
According to the circuit given in the figure, VT=25mV, |VBE|=0.7V, R1=1487.51Kohm, R2= 7.42Kohm, R3= 6.71Kohm , R4= 2.87Kohm, VCC= 13.00V, VEE= 1.00V , VA=28.21V , Beta= 120.00 , Rs= 36.18ohm, Ry= 15.61Kohm Calculate the IC current, Ri, R0 and voltage gain(V0/V1) according to the source by performing a complete analysis. When performing your operations, 2 steps will be taken after the point. choose the closest one from the stylish ones according to the +/-10% margin of error. There is only 1 correct answer to the question.
Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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Similar questions
- Considering the operating conditions of the NMOS circuit in the figure, 9m = 1.9 m was obtained. Also,RL when Rsig1 = 2 ko, Rsig2 = 3 kA, RF = 60 kg, R1 = 50 MQ, R2 = 12 MA, RD = 4.7 ko, RS = 1.2 kq and RL = 11.3 koWhat is the value of the load current li flowing through it? (Vi1 = 20 mV, Vi2 = 30 mV)NOTE-1: Capacitors are negligible at mid-band frequency.NOTE-2: NMOS output impedance will be taken into account and its value is ra = 20 ko.arrow_forwardFor the circuit shown in Fig. 3, determine the values of R1 and R2 that make that id = 3.6 m, if both transistors have k = 0.4 mili-ampers by volts to square, and vt = 0.5 volts. (It is known that the DC source delivers 4 mA.)arrow_forward1. A circuit with 2 or more connected transistors is called _________ or multi-staged amplification. A) Cascaded B) Inverter C) Dual amplifier D) Rectifier2. He is an Austrian-Hungarian physicist who developed the first undocumented semi-conductor device. A) Edward Howard B) Elizabeth Miles C) Morgan Sparks D) Julies Edgar Lilienfeld3. Who made the Bipolar junction? A) Daniel Levi B) John Jonson C) Mathew Wills D) Morgan Sparksarrow_forward
- In the voltage divider bias circuit shown, R1 = 8 kΩ R2=2 kΩ, RC=3.5 kΩ, RE=2 kΩ, VCC=13.5 V. Assuming a stiff voltage divider bias, calculate the following (βDC=100): Base voltage. Emitter Voltage. Emitter current. Collector Voltage. Collector to emitter voltage.arrow_forwardDescribe the extremely big integrated circuit idea (VLSI).arrow_forwardThe channel resistance of a MOSFET can be computed by getting the reciprocal of the derivative of the drain current with respect to the drain to source voltage. Compute the channel resistance (in Ω) of an NMOS operating in the linear region given the following MOSFET specifications: k = 2.39μA/V2, W/L = 157, VGS = 4V, VTH = 0.90V, and VDS = 0.24V.arrow_forward
- Consider the circuitshown below, where K = 0.2 mA/V2 and Vto = 0.8V.Suppose V1 and V3 must be equal. What is the maximum value that theycan have while M1 remains in saturation?arrow_forwardConsider the circuit shown in Figure P3.21. The measured value of the emitter voltage is Sketch the dc load line and plot the Q-point.arrow_forwardCalculate Ic, Vcc, β, and RB for the circuit shown belowarrow_forward
- The switches as shown can be implementedusing MOSFETs, as shown. Whatare the W/L ratios of the transistors if the onresistanceof the transistor is to be less than 1 percentof the resistor 2R = 10 kohm ? Assume thatthe voltage applied to the gate of the MOSFET is5 V when b1 = 1 and 0 V when b1 = 0. For theMOSFET, VTN = 1 V, K'n= 50 A/V2, 2φF = 0.6V, and γ = 0.5√V.arrow_forwardShow that the drain current IDQ is approximately equal to 3.65 mA (graphically or otherwise). Then calculate VDSQ.arrow_forward3)This MCQ QUESTION FROM BASIC POWER ELECTRICAL ENGINEERING course.arrow_forward
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