Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 3, Problem 3.68P
To determine
The drain current
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In the circuit given in the figure, Rk = 1.48Kohm, R1 = 7964.99Kohm, R2 = 7035.01Kohm, R3 = 2.46Kohm, R4 = 0.82Kohm, R5 = 24.08ohm, Ry = 98.63Kohm, VCC = 15.00V, VTN = 2.45V, Kn = Since 3.28(mA/V^2), C1= 6.30uF, C2=14.98uF, C3=10.96uF, calculate the lower cutoff frequency of the circuit in Hz.
Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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Similar questions
- In the circuit given in the figure, Rk = 1.48Kohm, R1 = 7964.99Kohm, R2 = 7035.01Kohm, R3 = 2.46Kohm, R4 = 0.82Kohm, R5 = 24.08ohm, Ry = 98.63Kohm, VCC = 15.00V, VTN = 2.45V, Kn = Since 3.28(mA/V^2), C1= 6.30uF, C2=14.98uF, C3=10.96uF, calculate the lower cutoff frequency of the circuit in Hz. When making your transactions, 2 digits will be taken after the dot.arrow_forwardConstruct the circuit of figure P3-2 using the bipolar junction transistor (BJT). Please typing format solutionarrow_forwardThe circuit shown in Figure P3.35 is a simplifiedDC version of a typical three-wire, three-phase ACY-Y distribution system.Write the mesh (or loop)equations and any additional equations required todetermine the current through R1 in the circuit shown.arrow_forward
- Find the voltage v across the 3- resistor in thecircuit of Figure P3.52 by replacing the remainder ofthe circuit with its Thévenin equivalentarrow_forwardTwo pure elements, R = 30 ohms and C = 400 microfarad, in a parallel connection have an applied voltage of the form v = 200 cos (2000t - 30degree) volts. Find the value of the total current at time t = 52 milliseconds.arrow_forwardA 10-mH inductor has a parasitic series resistance of R s =1 Ω, as shown in FigureP3.68.a. The current is given by i( t )=0.1 cos( 10 5 t ). Find v R ( t ), v L ( t ), and v(t). In thiscase, for 1-percent accuracy in computing v(t), could the resistance be neglected?b. Repeat if i( t )=0.1 cos( 10t ).arrow_forward
- A nonideal voltage source is modeled in FigureP3.72 as an ideal source in series with a resistance thatmodels the internal losses, that is, dissipates the samepower as the internal losses. In the circuit shown inFigure P3.72, with the load resistor removed so thatthe current is zero (i.e., no load), the terminal voltageof the source is measured and is 20 V. Then, withRL = 2.7 kΩ, the terminal voltage is again measuredand is now 18 V. Determine the internal resistance andthe voltage of the ideal source.arrow_forwardUsing KCL, perform node analysis on the circuitshown in Figure P3.24, and determine the voltageacross R4. Note that one source is a controlled voltagesource! Let VS = 5 V; AV = 70; R1 = 2.2 kΩ;R2 = 1.8 kΩ; R3 = 6.8 kΩ; R4 = 220Ωarrow_forwardConsider the circuit shown in Figure P3,34. Determine for:arrow_forward
- can someone show me step by step how to do this problem and explain the concepts A device, shown in Figure P3.5a, can be modeled by a current source in parallel with a resistance. The relationship between the current through the device, iX, and the voltage across the device, vX, is given in the plot in Figure P3.5b. a) Find a model for the device that would be valid when current is in the range 1[mA] < iX < 5[mA]. This model must have numerical values for the current and resistance, and the polarities with respect to vX and iX should be shown in a diagram. b) A voltage source is applied across the device so that vX = 10[V]. Find the power delivered by the device in this situation.arrow_forwardThe circuit shown in Figure P3.35 is a simplifiedDC version of an AC three-phase electrical distributionsystem.VS1 = VS2 = VS3 = 170 VRW1 = RW2 = RW3 = 0.7Ω R1 = 1.9Ω R2 = 2.3Ω R3 = 11 ΩTo prove how cumbersome and inefficient (althoughsometimes necessary) the method is, determine, usingsuperposition, the current through R1.arrow_forward5- self inductorQ3-A current source of 3 mA has an internal resistance of 5 MΩ. Over what range of load resistance is the current source stiff? Plot the diagram and circuit.arrow_forward
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